WOLFSPEED
Wolfspeed, A Cree Company, stands alone as the premier provider of the most field-tested SiC and GaN Power and RF solutions in the world. As the leader in wide bandgap semiconductor technology, we partner with the world's designers to build a new future of faster, smaller, lighter and more powerful electronic systems.
商品列表
CGHV35150F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 13.3dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 150V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 12A OutputPower: 170W MaximumDrainGateVoltage: - MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +150C Pd-PowerDissipation: - MountingStyle: Screw Package/Case: 440193 Packaging: Tube Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single DevelopmentKit: CGHV35150-TB FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: - Length: - NF-NoiseFigure: - OperatingFrequency: 3.1GHzto3.5GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: - RiseTime: - FactoryPackQuantity: 50 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: -
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 13.3dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 150V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 12A OutputPower: 170W MaximumDrainGateVoltage: - MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +150C Pd-PowerDissipation: - MountingStyle: Screw Package/Case: 440193 Packaging: Tube Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single DevelopmentKit: CGHV35150-TB FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: - Length: - NF-NoiseFigure: - OperatingFrequency: 3.1GHzto3.5GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: - RiseTime: - FactoryPackQuantity: 50 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: -
CGHV96050F2
供应商: Mouser Electronics
分类: RF JFET 트랜지스터
描述: RF JFET 트랜지스터 7.9-9.6GHz 50W GaN Gain 11.dB typ.
제조업체: Cree,Inc. 제품카테고리: RFJFET트랜지스터 트랜지스터타입: HEMT 기술: GaNSiC 이득: 10dB 트랜지스터극성: N-Channel Vds-드레인소스항복전압: 100V Vgs-게이트소스항복전압: 3V Id-연속드레인전류: 6A 출력전력: 50W 최대드레인게이트전압: - 최대작동온도: +150C Pd-전력발산: - 장착스타일: Screw 패키지/케이스: 440210 포장: Tray 적용: - 브랜드: Wolfspeed/Cree 클래스: - 구성: Single 개발키트: CGHV96050F2-TB 하강시간: - 순방향트랜스컨덕턴스-최소: - 게이트-소스차단전압: -10Vto+2V 높이: 5.03mm 길이: 23.01mm 최소작동온도: -40C NF-잡음지수: - 작동주파수: 8.4GHzto9.6GHz 작동온도범위: -40Cto+150C P1dB-압축지점: - 제품: GaNHEMT RdsOn-드레인소스저항: - 상승시간: - 팩토리팩수량: 50 타입: GaNSiCHEMT 표준턴-오프지연시간: - Vgsth-게이트소스역치전압: 2.3V 너비: 24.26mm
供应商: Mouser Electronics
分类: RF JFET 트랜지스터
描述: RF JFET 트랜지스터 7.9-9.6GHz 50W GaN Gain 11.dB typ.
제조업체: Cree,Inc. 제품카테고리: RFJFET트랜지스터 트랜지스터타입: HEMT 기술: GaNSiC 이득: 10dB 트랜지스터극성: N-Channel Vds-드레인소스항복전압: 100V Vgs-게이트소스항복전압: 3V Id-연속드레인전류: 6A 출력전력: 50W 최대드레인게이트전압: - 최대작동온도: +150C Pd-전력발산: - 장착스타일: Screw 패키지/케이스: 440210 포장: Tray 적용: - 브랜드: Wolfspeed/Cree 클래스: - 구성: Single 개발키트: CGHV96050F2-TB 하강시간: - 순방향트랜스컨덕턴스-최소: - 게이트-소스차단전압: -10Vto+2V 높이: 5.03mm 길이: 23.01mm 최소작동온도: -40C NF-잡음지수: - 작동주파수: 8.4GHzto9.6GHz 작동온도범위: -40Cto+150C P1dB-압축지점: - 제품: GaNHEMT RdsOn-드레인소스저항: - 상승시간: - 팩토리팩수량: 50 타입: GaNSiCHEMT 표준턴-오프지연시간: - Vgsth-게이트소스역치전압: 2.3V 너비: 24.26mm
CGHV14800F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: EvaluationBoards Type: RFTransistors ToolIsForEvaluationOf: CGHV14800F Frequency: 1.2GHzto1.4GHz OperatingSupplyVoltage: 50V Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: EvaluationboardforCGHV14800F MaximumOperatingTemperature: +100C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: EvaluationBoards Type: RFTransistors ToolIsForEvaluationOf: CGHV14800F Frequency: 1.2GHzto1.4GHz OperatingSupplyVoltage: 50V Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: EvaluationboardforCGHV14800F MaximumOperatingTemperature: +100C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
CGHV96050F1
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
Manufacturer: Cree,Inc. ProductCategory: RFJFETTransistors TransistorType: HEMT Technology: GaNSiC Gain: 16dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 6A OutputPower: 80W MaximumDrainGateVoltage: - MaximumOperatingTemperature: +150V Pd-PowerDissipation: - MountingStyle: Screw Package/Case: 440210 Packaging: Tray Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single DevelopmentKit: CGHV96050F1-TB FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: 5.03mm Length: 17.55mm MinimumOperatingTemperature: -40C NF-NoiseFigure: - OperatingFrequency: 7.9GHzto9.6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: - RiseTime: - FactoryPackQuantity: 50 Type: GaNSiCHEMT TypicalTurn-OffDelayTime: -
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
Manufacturer: Cree,Inc. ProductCategory: RFJFETTransistors TransistorType: HEMT Technology: GaNSiC Gain: 16dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 6A OutputPower: 80W MaximumDrainGateVoltage: - MaximumOperatingTemperature: +150V Pd-PowerDissipation: - MountingStyle: Screw Package/Case: 440210 Packaging: Tray Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single DevelopmentKit: CGHV96050F1-TB FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: 5.03mm Length: 17.55mm MinimumOperatingTemperature: -40C NF-NoiseFigure: - OperatingFrequency: 7.9GHzto9.6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: - RiseTime: - FactoryPackQuantity: 50 Type: GaNSiCHEMT TypicalTurn-OffDelayTime: -
CGH55030F2
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
CGHV60170D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
CGH55015F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV96050F1-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CMPA801B025F-TB
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier Test Board without GaN MMIC
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier Test Board without GaN MMIC
CMPA601C025F-TB
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier Test Board without GaN MMIC
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier Test Board without GaN MMIC