WOLFSPEED
Wolfspeed, A Cree Company, stands alone as the premier provider of the most field-tested SiC and GaN Power and RF solutions in the world. As the leader in wide bandgap semiconductor technology, we partner with the world's designers to build a new future of faster, smaller, lighter and more powerful electronic systems.
商品列表
CGH55030F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV14250F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
Share: | NoImage: DT2P-BT NoImage: AutomotiveConnectors NoImage: 1-1337481-0 NoImage: RFConnectors/CoaxialConnectors
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
Share: | NoImage: DT2P-BT NoImage: AutomotiveConnectors NoImage: 1-1337481-0 NoImage: RFConnectors/CoaxialConnectors
CMPA0060002F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN MMIC
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN MMIC
CGHV40100F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGH27030S
供应商: Mouser Electronics
分类: Transistores de efecto de campo de unión (JFET) y radiofrecuenci
描述: Transistores de efecto de campo de unión (JFET) y radiofrecuencia (RF) GaN HEMT DC-6.0GHz, 30 Watt
Categoríadeproducto: Transistoresdeefectodecampodeunión(JFET)yradiofrecuencia(RF) Fabricante: Cree,Inc. Tipodetransistor: HEMT Tecnología: GaN Ganancia: 18dB Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 84V Vds-Tensióndisruptivaentrepuertayfuente: -10V,2V Id-Corrientededrenajecontinua: 7A Potenciadesalida: 30W Voltajemáximodrenaje-puerta: 28V Temperaturadetrabajomáxima: +150C Dp-Disipacióndepotencia: 21.6W Estilodemontaje: SMD/SMT Paquete/Cubierta: DFN Empaquetado: CutTape Empaquetado: MouseReel Empaquetado: Reel Aplicación: Telecom Marca: Wolfspeed/Cree Configuración: Single Temperaturadetrabajomínima: -40C Frecuenciadetrabajo: 2.7GHz Rangodetemperaturadetrabajo: -40Cto+150C Cantidaddeempaquedefábrica: 250 Vgsth-Tensiónumbralentrepuertayfuente: -3.8V
供应商: Mouser Electronics
分类: Transistores de efecto de campo de unión (JFET) y radiofrecuenci
描述: Transistores de efecto de campo de unión (JFET) y radiofrecuencia (RF) GaN HEMT DC-6.0GHz, 30 Watt
Categoríadeproducto: Transistoresdeefectodecampodeunión(JFET)yradiofrecuencia(RF) Fabricante: Cree,Inc. Tipodetransistor: HEMT Tecnología: GaN Ganancia: 18dB Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 84V Vds-Tensióndisruptivaentrepuertayfuente: -10V,2V Id-Corrientededrenajecontinua: 7A Potenciadesalida: 30W Voltajemáximodrenaje-puerta: 28V Temperaturadetrabajomáxima: +150C Dp-Disipacióndepotencia: 21.6W Estilodemontaje: SMD/SMT Paquete/Cubierta: DFN Empaquetado: CutTape Empaquetado: MouseReel Empaquetado: Reel Aplicación: Telecom Marca: Wolfspeed/Cree Configuración: Single Temperaturadetrabajomínima: -40C Frecuenciadetrabajo: 2.7GHz Rangodetemperaturadetrabajo: -40Cto+150C Cantidaddeempaquedefábrica: 250 Vgsth-Tensiónumbralentrepuertayfuente: -3.8V
CMPA5585025F
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier GaN MMIC Power Amp 5.5-8.5GHz, 25 Watt
Share: | NoImage: GRM188R71H102JA01D NoImage: MultilayerCeramicCapacitorsMLCC-SMD/SMT
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier GaN MMIC Power Amp 5.5-8.5GHz, 25 Watt
Share: | NoImage: GRM188R71H102JA01D NoImage: MultilayerCeramicCapacitorsMLCC-SMD/SMT
CGH60060D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 13dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 6A OutputPower: 60W MaximumDrainGateVoltage: - MinimumOperatingTemperature: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DIE Packaging: Waffle Application: - Brand: Wolfspeed/Cree Class: - DevelopmentKit: - FallTime: - Gate-SourceCutoffVoltage: - Height: 100um Length: 2860um NF-NoiseFigure: - NumberofChannels: 4Channel OperatingFrequency: 4GHzto6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 0.25Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 920um
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 13dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 6A OutputPower: 60W MaximumDrainGateVoltage: - MinimumOperatingTemperature: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DIE Packaging: Waffle Application: - Brand: Wolfspeed/Cree Class: - DevelopmentKit: - FallTime: - Gate-SourceCutoffVoltage: - Height: 100um Length: 2860um NF-NoiseFigure: - NumberofChannels: 4Channel OperatingFrequency: 4GHzto6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 0.25Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 920um
CGHV60075D5
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
CGH40090PP
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt
CGHV40320D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: - TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 50V Vgs-Gate-SourceBreakdownVoltage: - Id-ContinuousDrainCurrent: - OutputPower: 320W MaximumDrainGateVoltage: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: BareDie Packaging: GelPack Application: - Brand: Wolfspeed/Cree Class: - Configuration: - DevelopmentKit: - FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: 100um Length: - MinimumOperatingTemperature: - NF-NoiseFigure: - OperatingFrequency: 4GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: - RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: - Width: -
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: - TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 50V Vgs-Gate-SourceBreakdownVoltage: - Id-ContinuousDrainCurrent: - OutputPower: 320W MaximumDrainGateVoltage: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: BareDie Packaging: GelPack Application: - Brand: Wolfspeed/Cree Class: - Configuration: - DevelopmentKit: - FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: 100um Length: - MinimumOperatingTemperature: - NF-NoiseFigure: - OperatingFrequency: 4GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: - RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: - Width: -