WOLFSPEED
Wolfspeed, A Cree Company, stands alone as the premier provider of the most field-tested SiC and GaN Power and RF solutions in the world. As the leader in wide bandgap semiconductor technology, we partner with the world's designers to build a new future of faster, smaller, lighter and more powerful electronic systems.
商品列表
CMPA1D1E025F
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier GaN MMIC Power Amp 13.75-14.5GHz 25Watt
ProductCategory: RFAmplifier Manufacturer: Cree,Inc. Type: Ku-BandPowerAmplifier OperatingFrequency: 14.5GHz Gain: 16.7dB NF-NoiseFigure: - TestFrequency: 1.6MHz MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +85C MountingStyle: SMD/SMT Packaging: Tray Brand: Wolfspeed/Cree FrequencyRange: 13.75GHzto14.5GHz InputReturnLoss: -8dB NumberofChannels: 1Channel Pd-PowerDissipation: 94W FactoryPackQuantity: 30 SupplyVoltage-Max: 40V Technology: GaN
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier GaN MMIC Power Amp 13.75-14.5GHz 25Watt
ProductCategory: RFAmplifier Manufacturer: Cree,Inc. Type: Ku-BandPowerAmplifier OperatingFrequency: 14.5GHz Gain: 16.7dB NF-NoiseFigure: - TestFrequency: 1.6MHz MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +85C MountingStyle: SMD/SMT Packaging: Tray Brand: Wolfspeed/Cree FrequencyRange: 13.75GHzto14.5GHz InputReturnLoss: -8dB NumberofChannels: 1Channel Pd-PowerDissipation: 94W FactoryPackQuantity: 30 SupplyVoltage-Max: 40V Technology: GaN
CGH40090PP-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV40030-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV1J025D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 17dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 2A OutputPower: 25W MaximumDrainGateVoltage: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: BareDie Packaging: GelPack Application: - Brand: Wolfspeed/Cree Class: - DevelopmentKit: - FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: 100um Length: 1920um MinimumOperatingTemperature: - NF-NoiseFigure: - NumberofChannels: 4Channel OperatingFrequency: 10MHzto18GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 0.6Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 800um
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 17dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 2A OutputPower: 25W MaximumDrainGateVoltage: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: BareDie Packaging: GelPack Application: - Brand: Wolfspeed/Cree Class: - DevelopmentKit: - FallTime: - ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - Height: 100um Length: 1920um MinimumOperatingTemperature: - NF-NoiseFigure: - NumberofChannels: 4Channel OperatingFrequency: 10MHzto18GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 0.6Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 800um
CGHV96050F2-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGH40025F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
CGH27060F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT VHF-3.0GHz, 60 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 14dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10V,2V Id-ContinuousDrainCurrent: 14A OutputPower: 60W MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +150C Pd-PowerDissipation: 56W MountingStyle: Screw Package/Case: 440193 Packaging: Tray Application: Telecom Brand: Wolfspeed/Cree Configuration: Single NF-NoiseFigure: 4dB OperatingFrequency: 2.7GHz OperatingTemperatureRange: -40Cto+150C FactoryPackQuantity: 50 Vgsth-Gate-SourceThresholdVoltage: -3V
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT VHF-3.0GHz, 60 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 14dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10V,2V Id-ContinuousDrainCurrent: 14A OutputPower: 60W MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +150C Pd-PowerDissipation: 56W MountingStyle: Screw Package/Case: 440193 Packaging: Tray Application: Telecom Brand: Wolfspeed/Cree Configuration: Single NF-NoiseFigure: 4dB OperatingFrequency: 2.7GHz OperatingTemperatureRange: -40Cto+150C FactoryPackQuantity: 50 Vgsth-Gate-SourceThresholdVoltage: -3V
CMPA0060025F-TB
供应商: Mouser Electronics
分类: Herramientas de desarrollo RF
描述: Herramientas de desarrollo RF Test Board without GaN MMIC
Categoríadeproducto: HerramientasdedesarrolloRF Fabricante: Cree,Inc. Producto: DemonstrationBoards Tipo: RFAmplifiers LaHerramientaesparalaEvaluaciónde: CMPA0060025F Frecuencia: 2500MHzto6000MHz Voltajedealimentaciónoperativo: 50V Empaquetado: Bulk Marca: Wolfspeed/Cree Descripción/Función: - Dimensiones: - Parautilizarcon: CMPA0060025F Tipodeinterfaz: - Temperaturadetrabajomáxima: +150C Temperaturadetrabajomínima: -65C Cantidaddeempaquedefábrica: 2
供应商: Mouser Electronics
分类: Herramientas de desarrollo RF
描述: Herramientas de desarrollo RF Test Board without GaN MMIC
Categoríadeproducto: HerramientasdedesarrolloRF Fabricante: Cree,Inc. Producto: DemonstrationBoards Tipo: RFAmplifiers LaHerramientaesparalaEvaluaciónde: CMPA0060025F Frecuencia: 2500MHzto6000MHz Voltajedealimentaciónoperativo: 50V Empaquetado: Bulk Marca: Wolfspeed/Cree Descripción/Función: - Dimensiones: - Parautilizarcon: CMPA0060025F Tipodeinterfaz: - Temperaturadetrabajomáxima: +150C Temperaturadetrabajomínima: -65C Cantidaddeempaquedefábrica: 2
CGH60015D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 15dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 1.5A OutputPower: 15W MaximumDrainGateVoltage: - MinimumOperatingTemperature: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DIE Packaging: Waffle Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single DevelopmentKit: - FallTime: - Gate-SourceCutoffVoltage: - Height: 100um Length: 1060um NF-NoiseFigure: - OperatingFrequency: 4GHzto6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 1Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 920um
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 15dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 1.5A OutputPower: 15W MaximumDrainGateVoltage: - MinimumOperatingTemperature: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DIE Packaging: Waffle Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single DevelopmentKit: - FallTime: - Gate-SourceCutoffVoltage: - Height: 100um Length: 1060um NF-NoiseFigure: - OperatingFrequency: 4GHzto6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 1Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 920um
CGHV40050F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT