CGHV96050F1
品牌
供应商
分类
RF JFET Transistors
描述
RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
物料参数
| Manufacturer: | Cree,Inc. |
| ProductCategory: | RFJFETTransistors |
| TransistorType: | HEMT |
| Technology: | GaNSiC |
| Gain: | 16dB |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 100V |
| Vgs-Gate-SourceBreakdownVoltage: | -10Vto+2V |
| Id-ContinuousDrainCurrent: | 6A |
| OutputPower: | 80W |
| MaximumDrainGateVoltage: | - |
| MaximumOperatingTemperature: | +150V |
| Pd-PowerDissipation: | - |
| MountingStyle: | Screw |
| Package/Case: | 440210 |
| Packaging: | Tray |
| Application: | - |
| Brand: | Wolfspeed/Cree |
| Class: | - |
| Configuration: | Single |
| DevelopmentKit: | CGHV96050F1-TB |
| FallTime: | - |
| ForwardTransconductance-Min: | - |
| Gate-SourceCutoffVoltage: | - |
| Height: | 5.03mm |
| Length: | 17.55mm |
| MinimumOperatingTemperature: | -40C |
| NF-NoiseFigure: | - |
| OperatingFrequency: | 7.9GHzto9.6GHz |
| OperatingTemperatureRange: | - |
| P1dB-CompressionPoint: | - |
| Product: | GaNHEMT |
| RdsOn-Drain-SourceResistance: | - |
| RiseTime: | - |
| FactoryPackQuantity: | 50 |
| Type: | GaNSiCHEMT |
| TypicalTurn-OffDelayTime: | - |