WOLFSPEED
Wolfspeed, A Cree Company, stands alone as the premier provider of the most field-tested SiC and GaN Power and RF solutions in the world. As the leader in wide bandgap semiconductor technology, we partner with the world's designers to build a new future of faster, smaller, lighter and more powerful electronic systems.
商品列表
CGHV1J070D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaNSiC Gain: 17dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 6A OutputPower: 70W MaximumOperatingTemperature: +225C MountingStyle: SMD/SMT Package/Case: Die Packaging: GelPack Brand: Wolfspeed/Cree Configuration: Single NumberofChannels: 1Channel OperatingFrequency: 10MHzto18GHz RdsOn-Drain-SourceResistance: 200mOhms FactoryPackQuantity: 10 Vgsth-Gate-SourceThresholdVoltage: -3V
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaNSiC Gain: 17dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 6A OutputPower: 70W MaximumOperatingTemperature: +225C MountingStyle: SMD/SMT Package/Case: Die Packaging: GelPack Brand: Wolfspeed/Cree Configuration: Single NumberofChannels: 1Channel OperatingFrequency: 10MHzto18GHz RdsOn-Drain-SourceResistance: 200mOhms FactoryPackQuantity: 10 Vgsth-Gate-SourceThresholdVoltage: -3V
CGHV1F025S-AMP1
供应商: Mouser Electronics
分类: Ferramentas de desenvolvimento RF
描述: Ferramentas de desenvolvimento RF Test Board with GaN HEMT
Categoriadeproduto: FerramentasdedesenvolvimentoRF Fabricante: Cree,Inc. Produto: DemonstrationBoards Tipo: RFTransistors Ferramentaparaavaliaçãode: CGHV1F025S Frequência: 15GHz Embalagem: Bulk Marca: Wolfspeed/Cree Descrição/Função: ApplicationcircuitforCGHV1F025S Temperaturaoperacionalmáxima: +150C Temperaturaoperacionalmínima: -40C Quantidadedopacotedefábrica: 1
供应商: Mouser Electronics
分类: Ferramentas de desenvolvimento RF
描述: Ferramentas de desenvolvimento RF Test Board with GaN HEMT
Categoriadeproduto: FerramentasdedesenvolvimentoRF Fabricante: Cree,Inc. Produto: DemonstrationBoards Tipo: RFTransistors Ferramentaparaavaliaçãode: CGHV1F025S Frequência: 15GHz Embalagem: Bulk Marca: Wolfspeed/Cree Descrição/Função: ApplicationcircuitforCGHV1F025S Temperaturaoperacionalmáxima: +150C Temperaturaoperacionalmínima: -40C Quantidadedopacotedefábrica: 1
CGHV40030F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
CGH55030F1
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
CGHV60040D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
CGHV1F006S-AMP1
供应商: Mouser Electronics
分类: Радиочастотные средства разработки
描述: Радиочастотные средства разработки Test Board with GaN HEMT
Категорияпродукта: Радиочастотныесредстваразработки Производитель: Cree,Inc. Продукт: DemonstrationBoards Тип: RFTransistors Средствопредназначенодляоценки: CGHV1F006S Частота: 2.5GHzto2.7GHz Рабочеенапряжениепитания: 50V Упаковка: Tray Торговаямарка: Wolfspeed/Cree Описание/функция: ApplicationcircuitforCGHV1F006S Максимальнаярабочаятемпература: +150C Минимальнаярабочаятемпература: -40C Размерфабричнойупаковки: 1
供应商: Mouser Electronics
分类: Радиочастотные средства разработки
描述: Радиочастотные средства разработки Test Board with GaN HEMT
Категорияпродукта: Радиочастотныесредстваразработки Производитель: Cree,Inc. Продукт: DemonstrationBoards Тип: RFTransistors Средствопредназначенодляоценки: CGHV1F006S Частота: 2.5GHzto2.7GHz Рабочеенапряжениепитания: 50V Упаковка: Tray Торговаямарка: Wolfspeed/Cree Описание/функция: ApplicationcircuitforCGHV1F006S Максимальнаярабочаятемпература: +150C Минимальнаярабочаятемпература: -40C Размерфабричнойупаковки: 1
CMPA801B025F
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
供应商: Mouser Electronics
分类: RF Amplifier
描述: RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
CGH40045F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGD15HB62LP
供应商: Mouser Electronics
分类: Power Management IC Development Tools
描述: Power Management IC Development Tools Companion GateDriver for 941-CAS325M12HM2
ProductCategory: PowerManagementICDevelopmentTools Manufacturer: Cree,Inc. Product: EvaluationBoards Type: GateDrivers ToolIsForEvaluationOf: CAS325M12HM2 InputVoltage: 12V OutputVoltage: -5V/+20V Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: Gatedriverboard Dimensions: 110mmx65mmx31.7mm ForUseWith: CAS325M12HM2 OutputCurrent: 4A FactoryPackQuantity: 1
供应商: Mouser Electronics
分类: Power Management IC Development Tools
描述: Power Management IC Development Tools Companion GateDriver for 941-CAS325M12HM2
ProductCategory: PowerManagementICDevelopmentTools Manufacturer: Cree,Inc. Product: EvaluationBoards Type: GateDrivers ToolIsForEvaluationOf: CAS325M12HM2 InputVoltage: 12V OutputVoltage: -5V/+20V Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: Gatedriverboard Dimensions: 110mmx65mmx31.7mm ForUseWith: CAS325M12HM2 OutputCurrent: 4A FactoryPackQuantity: 1