WOLFSPEED
Wolfspeed, A Cree Company, stands alone as the premier provider of the most field-tested SiC and GaN Power and RF solutions in the world. As the leader in wide bandgap semiconductor technology, we partner with the world's designers to build a new future of faster, smaller, lighter and more powerful electronic systems.
商品列表
CGHV14250F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: DemonstrationBoards Type: RFTransistors ToolIsForEvaluationOf: CGHV14250F Frequency: 1.2GHzto1.4GHz OperatingSupplyVoltage: - Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: DemonstrationboardforCGHV14250F Dimensions: - ForUseWith: CGHV14250F InterfaceType: - MaximumOperatingTemperature: +130C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: DemonstrationBoards Type: RFTransistors ToolIsForEvaluationOf: CGHV14250F Frequency: 1.2GHzto1.4GHz OperatingSupplyVoltage: - Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: DemonstrationboardforCGHV14250F Dimensions: - ForUseWith: CGHV14250F InterfaceType: - MaximumOperatingTemperature: +130C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
CGHV27060MP-AMP1
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board with GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board with GaN HEMT
CGHV14800F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 1.2-1.4GHz, 800 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 14dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 150V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 24A OutputPower: 800W MaximumDrainGateVoltage: - MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +100C Pd-PowerDissipation: - MountingStyle: Screw Package/Case: 440117 Packaging: Tray Brand: Wolfspeed/Cree DevelopmentKit: CGHV14800F-TB ForwardTransconductance-Min: - OperatingFrequency: 1.2GHzto1.4GHz OperatingTemperatureRange: -40Cto+100C FactoryPackQuantity: 50 Vgsth-Gate-SourceThresholdVoltage: -3.8V
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 1.2-1.4GHz, 800 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 14dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 150V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 24A OutputPower: 800W MaximumDrainGateVoltage: - MinimumOperatingTemperature: -40C MaximumOperatingTemperature: +100C Pd-PowerDissipation: - MountingStyle: Screw Package/Case: 440117 Packaging: Tray Brand: Wolfspeed/Cree DevelopmentKit: CGHV14800F-TB ForwardTransconductance-Min: - OperatingFrequency: 1.2GHzto1.4GHz OperatingTemperatureRange: -40Cto+100C FactoryPackQuantity: 50 Vgsth-Gate-SourceThresholdVoltage: -3.8V
CGH55015F1
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 5.5-5.8GHz, 15 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 5.5-5.8GHz, 15 Watt
CGHV1F006S-AMP3
供应商: Mouser Electronics
分类: Радиочастотные средства разработки
描述: Радиочастотные средства разработки Test Board with GaN HEMT
Категорияпродукта: Радиочастотныесредстваразработки Производитель: Cree,Inc. Продукт: DemonstrationBoards Тип: RFTransistors Средствопредназначенодляоценки: CGHV1F006S Частота: 1.8GHzto2.2GHz Рабочеенапряжениепитания: 28V Упаковка: Bulk Торговаямарка: Wolfspeed/Cree Описание/функция: ApplicationcircuitforCGHV1F006S Максимальнаярабочаятемпература: +150C Минимальнаярабочаятемпература: -40C Размерфабричнойупаковки: 1
供应商: Mouser Electronics
分类: Радиочастотные средства разработки
描述: Радиочастотные средства разработки Test Board with GaN HEMT
Категорияпродукта: Радиочастотныесредстваразработки Производитель: Cree,Inc. Продукт: DemonstrationBoards Тип: RFTransistors Средствопредназначенодляоценки: CGHV1F006S Частота: 1.8GHzto2.2GHz Рабочеенапряжениепитания: 28V Упаковка: Bulk Торговаямарка: Wolfspeed/Cree Описание/функция: ApplicationcircuitforCGHV1F006S Максимальнаярабочаятемпература: +150C Минимальнаярабочаятемпература: -40C Размерфабричнойупаковки: 1
CGH60120D
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 13dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 12A OutputPower: 120W MaximumDrainGateVoltage: - MinimumOperatingTemperature: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DIE Packaging: Waffle Application: - Brand: Wolfspeed/Cree Class: - DevelopmentKit: - FallTime: - Gate-SourceCut-offVoltage: - Height: 100um Length: 5260um NF-NoiseFigure: - NumberofChannels: 8Channel OperatingFrequency: 4GHzto6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 0.1Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 920um
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 13dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 12A OutputPower: 120W MaximumDrainGateVoltage: - MinimumOperatingTemperature: - MaximumOperatingTemperature: - Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DIE Packaging: Waffle Application: - Brand: Wolfspeed/Cree Class: - DevelopmentKit: - FallTime: - Gate-SourceCut-offVoltage: - Height: 100um Length: 5260um NF-NoiseFigure: - NumberofChannels: 8Channel OperatingFrequency: 4GHzto6GHz OperatingTemperatureRange: - P1dB-CompressionPoint: - Product: GaNHEMT RdsOn-Drain-SourceResistance: 0.1Ohms RiseTime: - FactoryPackQuantity: 10 TypicalTurn-OffDelayTime: - Vgsth-Gate-SourceThresholdVoltage: -3V Width: 920um
CGH40180PP-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: DemonstrationBoards Type: RFTransistors ToolIsForEvaluationOf: CGH40180PP Frequency: 2.5GHz OperatingSupplyVoltage: 28V Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: DemonstrationboardforCGH40180PP Dimensions: - ForUseWith: CGH40180PP InterfaceType: - MaximumOperatingTemperature: +150C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: DemonstrationBoards Type: RFTransistors ToolIsForEvaluationOf: CGH40180PP Frequency: 2.5GHz OperatingSupplyVoltage: 28V Packaging: Bulk Brand: Wolfspeed/Cree Description/Function: DemonstrationboardforCGH40180PP Dimensions: - ForUseWith: CGH40180PP InterfaceType: - MaximumOperatingTemperature: +150C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
CGH40025F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV35400F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 2.9-3.5GHz, 400 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 2.9-3.5GHz, 400 Watt
CGH40035F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
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供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
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