CGHV14800F
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>RF Transis
描述
RF JFET Transistors GaN HEMT 1.2-1.4GHz, 800 Watt
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | Cree,Inc. |
| TransistorType: | HEMT |
| Technology: | GaN |
| Gain: | 14dB |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 150V |
| Vgs-Gate-SourceBreakdownVoltage: | -10Vto+2V |
| Id-ContinuousDrainCurrent: | 24A |
| OutputPower: | 800W |
| MaximumDrainGateVoltage: | - |
| MinimumOperatingTemperature: | -40C |
| MaximumOperatingTemperature: | +100C |
| Pd-PowerDissipation: | - |
| MountingStyle: | Screw |
| Package/Case: | 440117 |
| Packaging: | Tray |
| Brand: | Wolfspeed/Cree |
| DevelopmentKit: | CGHV14800F-TB |
| ForwardTransconductance-Min: | - |
| OperatingFrequency: | 1.2GHzto1.4GHz |
| OperatingTemperatureRange: | -40Cto+100C |
| FactoryPackQuantity: | 50 |
| Vgsth-Gate-SourceThresholdVoltage: | -3.8V |