CGH60120D
品牌
供应商
分类
trzqyqacatdebfdzatvcxcxtxtx>>Semiconductors>>Discrete Semiconduc
描述
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | Cree,Inc. |
| TransistorType: | HEMT |
| Technology: | GaN |
| Gain: | 13dB |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 120V |
| Vgs-Gate-SourceBreakdownVoltage: | -10Vto+2V |
| Id-ContinuousDrainCurrent: | 12A |
| OutputPower: | 120W |
| MaximumDrainGateVoltage: | - |
| MinimumOperatingTemperature: | - |
| MaximumOperatingTemperature: | - |
| Pd-PowerDissipation: | - |
| MountingStyle: | SMD/SMT |
| Package/Case: | DIE |
| Packaging: | Waffle |
| Application: | - |
| Brand: | Wolfspeed/Cree |
| Class: | - |
| DevelopmentKit: | - |
| FallTime: | - |
| Gate-SourceCut-offVoltage: | - |
| Height: | 100um |
| Length: | 5260um |
| NF-NoiseFigure: | - |
| NumberofChannels: | 8Channel |
| OperatingFrequency: | 4GHzto6GHz |
| OperatingTemperatureRange: | - |
| P1dB-CompressionPoint: | - |
| Product: | GaNHEMT |
| RdsOn-Drain-SourceResistance: | 0.1Ohms |
| RiseTime: | - |
| FactoryPackQuantity: | 10 |
| TypicalTurn-OffDelayTime: | - |
| Vgsth-Gate-SourceThresholdVoltage: | -3V |
| Width: | 920um |