CGH27060F

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供应商
分类
ebtwvyddeavystszttubevccftezfr>>Semiconductors>>Discrete Semicon
描述
RF JFET Transistors GaN HEMT VHF-3.0GHz, 60 Watt

物料参数

ProductCategory:RFJFETTransistors
Manufacturer:Cree,Inc.
TransistorType:HEMT
Technology:GaN
Gain:14dB
TransistorPolarity:N-Channel
Vds-Drain-SourceBreakdownVoltage:120V
Vgs-Gate-SourceBreakdownVoltage:-10V,2V
Id-ContinuousDrainCurrent:14A
OutputPower:60W
MinimumOperatingTemperature:-40C
MaximumOperatingTemperature:+150C
Pd-PowerDissipation:56W
MountingStyle:Screw
Package/Case:440193
Packaging:Tray
Application:Telecom
Brand:Wolfspeed/Cree
Configuration:Single
NF-NoiseFigure:4dB
OperatingFrequency:2.7GHz
OperatingTemperatureRange:-40Cto+150C
FactoryPackQuantity:50
Vgsth-Gate-SourceThresholdVoltage:-3V