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TDPV1000E0C1-KIT
供应商: DigiKey
供应商: DigiKey
TP65H035WS
供应商: DigiKey
Vgs(th)(Max)@Id: 4.8V @ 1mA standardLeadTime: 16 Weeks FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 36 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 46.5A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 150°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 150°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 3 (168 Hours) ECCN: EAR99 rolledUpProductNumber: TP65H035WS-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.8V @ 1mA InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 400 V detailedDescription: N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h035ws-650v-gan-fet/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 46.5A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 12V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H035WS Power Dissipation (Max): 156W (Tc) BaseProductNumber: TP65H035 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 156W (Tc) FET Feature: - isNormallyStocking: True RoHSStatus: ROHS3 Compliant ProductStatus: Active RdsOn(Max)@Id,Vgs: 41mOhm @ 30A, 10V Series: - rolledUpProductId: 9350929 Base Product Number: TP65H035
供应商: DigiKey
Vgs(th)(Max)@Id: 4.8V @ 1mA standardLeadTime: 16 Weeks FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 36 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 46.5A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 150°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 150°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 3 (168 Hours) ECCN: EAR99 rolledUpProductNumber: TP65H035WS-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.8V @ 1mA InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 400 V detailedDescription: N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h035ws-650v-gan-fet/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 46.5A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 12V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H035WS Power Dissipation (Max): 156W (Tc) BaseProductNumber: TP65H035 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 156W (Tc) FET Feature: - isNormallyStocking: True RoHSStatus: ROHS3 Compliant ProductStatus: Active RdsOn(Max)@Id,Vgs: 41mOhm @ 30A, 10V Series: - rolledUpProductId: 9350929 Base Product Number: TP65H035
TP65H035WSQA
供应商: DigiKey
Vgs(th)(Max)@Id: 4.5V @ 1mA standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 47.2A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 175°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 175°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TP65H035WSQA-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 400 V detailedDescription: N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/wp-content/uploads/2020/02/tp65h035wsqa_v1-1.pdf manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 47.2A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 10V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H035WSQA Power Dissipation (Max): 187W (Tc) BaseProductNumber: TP65H035 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 187W (Tc) isNormallyStocking: True ProductStatus: Active RdsOn(Max)@Id,Vgs: 41mOhm @ 32A, 10V Series: Automotive, AEC-Q101 rolledUpProductId: 9948196 Base Product Number: TP65H035
供应商: DigiKey
Vgs(th)(Max)@Id: 4.5V @ 1mA standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 47.2A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 175°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 175°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TP65H035WSQA-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 400 V detailedDescription: N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/wp-content/uploads/2020/02/tp65h035wsqa_v1-1.pdf manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 47.2A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 10V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H035WSQA Power Dissipation (Max): 187W (Tc) BaseProductNumber: TP65H035 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 187W (Tc) isNormallyStocking: True ProductStatus: Active RdsOn(Max)@Id,Vgs: 41mOhm @ 32A, 10V Series: Automotive, AEC-Q101 rolledUpProductId: 9948196 Base Product Number: TP65H035
TP65H050WS
供应商: DigiKey
Vgs(th)(Max)@Id: 4.8V @ 700µA standardLeadTime: 16 Weeks FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 34A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 150°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 150°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TP65H050WS-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA InputCapacitance(Ciss)(Max)@Vds: 1000 pF @ 400 V detailedDescription: N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h050ws-650v-gan-fet/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 34A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 12V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H050WS Power Dissipation (Max): 119W (Tc) BaseProductNumber: TP65H050 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 119W (Tc) FET Feature: - isNormallyStocking: True RoHSStatus: ROHS3 Compliant ProductStatus: Active RdsOn(Max)@Id,Vgs: 60mOhm @ 22A, 10V Series: - rolledUpProductId: 9350928 Base Product Number: TP65H050
供应商: DigiKey
Vgs(th)(Max)@Id: 4.8V @ 700µA standardLeadTime: 16 Weeks FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 34A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 150°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 150°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TP65H050WS-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA InputCapacitance(Ciss)(Max)@Vds: 1000 pF @ 400 V detailedDescription: N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h050ws-650v-gan-fet/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 34A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 12V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H050WS Power Dissipation (Max): 119W (Tc) BaseProductNumber: TP65H050 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 119W (Tc) FET Feature: - isNormallyStocking: True RoHSStatus: ROHS3 Compliant ProductStatus: Active RdsOn(Max)@Id,Vgs: 60mOhm @ 22A, 10V Series: - rolledUpProductId: 9350928 Base Product Number: TP65H050
TP65H050WSQA
供应商: DigiKey
Vgs(th)(Max)@Id: 4.8V @ 700µA standardLeadTime: 16 Weeks FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 36A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 175°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 175°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: 1707-TP65H050WSQA-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA InputCapacitance(Ciss)(Max)@Vds: 1000 pF @ 400 V detailedDescription: N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h050wsqa/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/737/MFG_TO-247.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 36A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 10V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H050WSQA Power Dissipation (Max): 150W (Tc) BaseProductNumber: TP65H050 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 150W (Tc) FET Feature: - isNormallyStocking: True RoHSStatus: ROHS3 Compliant ProductStatus: Active RdsOn(Max)@Id,Vgs: 60mOhm @ 25A, 10V Series: Automotive, AEC-Q101 rolledUpProductId: 10712699 Base Product Number: TP65H050
供应商: DigiKey
Vgs(th)(Max)@Id: 4.8V @ 700µA standardLeadTime: 16 Weeks FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V Product Status: Active Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Cascode Gallium Nitride FET) Current-ContinuousDrain(Id)@25°C: 36A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 175°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 175°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: 1707-TP65H050WSQA-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA InputCapacitance(Ciss)(Max)@Vds: 1000 pF @ 400 V detailedDescription: N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h050wsqa/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/737/MFG_TO-247.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 36A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 10V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TP65H050WSQA Power Dissipation (Max): 150W (Tc) BaseProductNumber: TP65H050 Vgs(Max): ±20V Mfr: Transphorm Vgs (Max): ±20V PowerDissipation(Max): 150W (Tc) FET Feature: - isNormallyStocking: True RoHSStatus: ROHS3 Compliant ProductStatus: Active RdsOn(Max)@Id,Vgs: 60mOhm @ 25A, 10V Series: Automotive, AEC-Q101 rolledUpProductId: 10712699 Base Product Number: TP65H050
TPH3205WSBQA
供应商: DigiKey
Vgs(th)(Max)@Id: 2.6V @ 700µA FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V GateCharge(Qg)(Max)@Vgs: 42 nC @ 8 V Product Status: Obsolete Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Gallium Nitride) Current-ContinuousDrain(Id)@25°C: 35A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 150°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 150°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TPH3205WSBQA-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V Vgs(th) (Max) @ Id: 2.6V @ 700µA InputCapacitance(Ciss)(Max)@Vds: 2200 pF @ 400 V detailedDescription: N-Channel 650 V 35A (Tc) 125W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/650v-aec-q101-cascode-gan-fet-tph3205wsbqa/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/1707_TO-247-3.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 35A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 10V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TPH3205WSBQA Power Dissipation (Max): 125W (Tc) BaseProductNumber: TPH3205 Vgs(Max): ±18V Mfr: Transphorm Vgs (Max): ±18V PowerDissipation(Max): 125W (Tc) FET Feature: - isNormallyStocking: False ProductStatus: Obsolete RdsOn(Max)@Id,Vgs: 62mOhm @ 22A, 8V Series: Automotive, AEC-Q101 rolledUpProductId: 6819123 Base Product Number: TPH3205
供应商: DigiKey
Vgs(th)(Max)@Id: 2.6V @ 700µA FETFeature: - Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V GateCharge(Qg)(Max)@Vgs: 42 nC @ 8 V Product Status: Obsolete Drain to Source Voltage (Vdss): 650 V SupplierDevicePackage: TO-247-3 Package / Case: TO-247-3 Technology: GaNFET (Gallium Nitride) Current-ContinuousDrain(Id)@25°C: 35A (Tc) CaliforniaProp65: Operating Temperature: -55°C ~ 150°C (TJ) DraintoSourceVoltage(Vdss): 650 V OperatingTemperature: -55°C ~ 150°C (TJ) Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TPH3205WSBQA-ND MountingType: Through Hole Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V Vgs(th) (Max) @ Id: 2.6V @ 700µA InputCapacitance(Ciss)(Max)@Vds: 2200 pF @ 400 V detailedDescription: N-Channel 650 V 35A (Tc) 125W (Tc) Through Hole TO-247-3 FETType: N-Channel datasheetUrl: https://www.transphormusa.com/en/document/650v-aec-q101-cascode-gan-fet-tph3205wsbqa/ manufacturerUrl: /en/supplier-centers/transphorm Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube HTSUS: 8541.29.0095 lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/1707_TO-247-3.jpg Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type: N-Channel description: GANFET N-CH 650V 35A TO247-3 DriveVoltage(MaxRdsOn,MinRdsOn): 10V Supplier Device Package: TO-247-3 manufacturer: Transphorm manufacturerProductNumber: TPH3205WSBQA Power Dissipation (Max): 125W (Tc) BaseProductNumber: TPH3205 Vgs(Max): ±18V Mfr: Transphorm Vgs (Max): ±18V PowerDissipation(Max): 125W (Tc) FET Feature: - isNormallyStocking: False ProductStatus: Obsolete RdsOn(Max)@Id,Vgs: 62mOhm @ 22A, 8V Series: Automotive, AEC-Q101 rolledUpProductId: 6819123 Base Product Number: TPH3205
TPH3205WSB
供应商: DigiKey
供应商: DigiKey
TDHB-65H070L-DC
供应商: DigiKey
MainPurpose: DC/DC Converter lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/695/MFG_TDHB-65H070-DC.jpg Category: Development Boards, Kits, ProgrammersEvaluation BoardsDC/DC & AC/DC (Off-Line) SMPS Evaluation Boards standardLeadTime: 27 Weeks Current - Output: 16A description: TP65H070L HALF-BRIDGE BOARD OutputsandType: 1, Non-Isolated Product Status: Active manufacturer: Transphorm manufacturerProductNumber: TDHB-65H070L-DC Regulator Topology: Boost, Buck, Half-Bridge BaseProductNumber: TDHB-65 Voltage-Output: - BoardType: Fully Populated Frequency - Switching: - Supplied Contents: Board(s), Power Supply Voltage - Output: - Mfr: Transphorm Utilized IC / Part: TP65H070L Voltage - Input: - Main Purpose: DC/DC Converter Frequency-Switching: - isNormallyStocking: True ProductStatus: Active MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TDHB-65H070L-DC-ND Current-Output: 16A Series: - SuppliedContents: Board(s), Power Supply detailedDescription: TP65H070L - DC/DC Converter 1, Non-Isolated Outputs Evaluation Board UtilizedIC/Part: TP65H070L datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h070l-650v-gan-fet/ manufacturerUrl: /en/supplier-centers/transphorm Voltage-Input: - RegulatorTopology: Boost, Buck, Half-Bridge Board Type: Fully Populated Outputs and Type: 1, Non-Isolated Package: Bulk HTSUS: 8473.30.1180 rolledUpProductId: 10127232 Base Product Number: TDHB-65
供应商: DigiKey
MainPurpose: DC/DC Converter lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/695/MFG_TDHB-65H070-DC.jpg Category: Development Boards, Kits, ProgrammersEvaluation BoardsDC/DC & AC/DC (Off-Line) SMPS Evaluation Boards standardLeadTime: 27 Weeks Current - Output: 16A description: TP65H070L HALF-BRIDGE BOARD OutputsandType: 1, Non-Isolated Product Status: Active manufacturer: Transphorm manufacturerProductNumber: TDHB-65H070L-DC Regulator Topology: Boost, Buck, Half-Bridge BaseProductNumber: TDHB-65 Voltage-Output: - BoardType: Fully Populated Frequency - Switching: - Supplied Contents: Board(s), Power Supply Voltage - Output: - Mfr: Transphorm Utilized IC / Part: TP65H070L Voltage - Input: - Main Purpose: DC/DC Converter Frequency-Switching: - isNormallyStocking: True ProductStatus: Active MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 rolledUpProductNumber: TDHB-65H070L-DC-ND Current-Output: 16A Series: - SuppliedContents: Board(s), Power Supply detailedDescription: TP65H070L - DC/DC Converter 1, Non-Isolated Outputs Evaluation Board UtilizedIC/Part: TP65H070L datasheetUrl: https://www.transphormusa.com/en/document/datasheet-tp65h070l-650v-gan-fet/ manufacturerUrl: /en/supplier-centers/transphorm Voltage-Input: - RegulatorTopology: Boost, Buck, Half-Bridge Board Type: Fully Populated Outputs and Type: 1, Non-Isolated Package: Bulk HTSUS: 8473.30.1180 rolledUpProductId: 10127232 Base Product Number: TDHB-65
TDPS1000E0E10-KIT
供应商: DigiKey
供应商: DigiKey
TDINV3000W050B-KIT
供应商: DigiKey
供应商: DigiKey