TP65H050WS

品牌
TRANSPHORM INC
供应商

物料参数

Vgs(th)(Max)@Id:4.8V @ 700µA
standardLeadTime:16 Weeks
FETFeature:-
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
GateCharge(Qg)(Max)@Vgs:24 nC @ 10 V
Product Status:Active
Drain to Source Voltage (Vdss):650 V
SupplierDevicePackage:TO-247-3
Package / Case:TO-247-3
Technology:GaNFET (Cascode Gallium Nitride FET)
Current-ContinuousDrain(Id)@25°C:34A (Tc)
CaliforniaProp65:
Operating Temperature:-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss):650 V
OperatingTemperature:-55°C ~ 150°C (TJ)
Package/Case:TO-247-3
MoistureSensitivityLevel(MSL):1 (Unlimited)
ECCN:EAR99
rolledUpProductNumber:TP65H050WS-ND
MountingType:Through Hole
Mounting Type:Through Hole
Rds On (Max) @ Id, Vgs:60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
InputCapacitance(Ciss)(Max)@Vds:1000 pF @ 400 V
detailedDescription:N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
FETType:N-Channel
datasheetUrl:https://www.transphormusa.com/en/document/datasheet-tp65h050ws-650v-gan-fet/
manufacturerUrl:/en/supplier-centers/transphorm
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V
Package:Tube
HTSUS:8541.29.0095
lnkProductPhoto:https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/MFG_TP65H0xxWS.jpg
Category:Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
FET Type:N-Channel
description:GANFET N-CH 650V 34A TO247-3
DriveVoltage(MaxRdsOn,MinRdsOn):12V
Supplier Device Package:TO-247-3
manufacturer:Transphorm
manufacturerProductNumber:TP65H050WS
Power Dissipation (Max):119W (Tc)
BaseProductNumber:TP65H050
Vgs(Max):±20V
Mfr:Transphorm
Vgs (Max):±20V
PowerDissipation(Max):119W (Tc)
FET Feature:-
isNormallyStocking:True
RoHSStatus:ROHS3 Compliant
ProductStatus:Active
RdsOn(Max)@Id,Vgs:60mOhm @ 22A, 10V
Series:-
rolledUpProductId:9350928
Base Product Number:TP65H050