TPH3205WSBQA

品牌
TRANSPHORM INC
供应商

物料参数

Vgs(th)(Max)@Id:2.6V @ 700µA
FETFeature:-
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 8 V
GateCharge(Qg)(Max)@Vgs:42 nC @ 8 V
Product Status:Obsolete
Drain to Source Voltage (Vdss):650 V
SupplierDevicePackage:TO-247-3
Package / Case:TO-247-3
Technology:GaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C:35A (Tc)
CaliforniaProp65:
Operating Temperature:-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss):650 V
OperatingTemperature:-55°C ~ 150°C (TJ)
Package/Case:TO-247-3
MoistureSensitivityLevel(MSL):1 (Unlimited)
ECCN:EAR99
rolledUpProductNumber:TPH3205WSBQA-ND
MountingType:Through Hole
Mounting Type:Through Hole
Rds On (Max) @ Id, Vgs:62mOhm @ 22A, 8V
Vgs(th) (Max) @ Id:2.6V @ 700µA
InputCapacitance(Ciss)(Max)@Vds:2200 pF @ 400 V
detailedDescription:N-Channel 650 V 35A (Tc) 125W (Tc) Through Hole TO-247-3
FETType:N-Channel
datasheetUrl:https://www.transphormusa.com/en/document/650v-aec-q101-cascode-gan-fet-tph3205wsbqa/
manufacturerUrl:/en/supplier-centers/transphorm
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Package:Tube
HTSUS:8541.29.0095
lnkProductPhoto:https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/1707_TO-247-3.jpg
Category:Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
FET Type:N-Channel
description:GANFET N-CH 650V 35A TO247-3
DriveVoltage(MaxRdsOn,MinRdsOn):10V
Supplier Device Package:TO-247-3
manufacturer:Transphorm
manufacturerProductNumber:TPH3205WSBQA
Power Dissipation (Max):125W (Tc)
BaseProductNumber:TPH3205
Vgs(Max):±18V
Mfr:Transphorm
Vgs (Max):±18V
PowerDissipation(Max):125W (Tc)
FET Feature:-
isNormallyStocking:False
ProductStatus:Obsolete
RdsOn(Max)@Id,Vgs:62mOhm @ 22A, 8V
Series:Automotive, AEC-Q101
rolledUpProductId:6819123
Base Product Number:TPH3205
价格梯度 价格
540+¥13.9881
包装:540 库存:0