SEMIQ

GHXS010A060S-D3
供应商: Microchip Technology Inc

GSXD080A010S1-D3
供应商: Microchip Technology Inc

GP3D008A065A
供应商: Microchip Technology Inc

GP3D040A120U
供应商: Microchip Technology Inc

GSXD060A012S1-D3
供应商: Microchip Technology Inc

GP3D012A065B
供应商: DigiKey
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/498/MFG_GP3D0xxAxxxB.jpg Category: Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes standardLeadTime: 28 Weeks Reverse Recovery Time (trr): 0 ns description: DIODE SIL CARB 650V 12A TO247-2 Product Status: Active Supplier Device Package: TO-247-2 manufacturer: SemiQ manufacturerProductNumber: GP3D012A065B SupplierDevicePackage: TO-247-2 BaseProductNumber: GP3D012 Voltage-Forward(Vf)(Max)@If: 1.5 V @ 12 A Package / Case: TO-247-2 Technology: SiC (Silicon Carbide) Schottky Mfr: SemiQ Current-AverageRectified(Io): 12A Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Operating Temperature - Junction: -55°C ~ 175°C Current-ReverseLeakage@Vr: 30 µA @ 650 V Speed: No Recovery Time > 500mA (Io) isNormallyStocking: True Capacitance @ Vr, F: 572pF @ 1V, 1MHz RoHSStatus: ROHS3 Compliant ProductStatus: Active Package/Case: TO-247-2 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 REACHStatus: REACH Affected rolledUpProductNumber: 1560-GP3D012A065B-ND ReverseRecoveryTime(trr): 0 ns MountingType: Through Hole Mounting Type: Through Hole Capacitance@Vr,F: 572pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 30 µA @ 650 V Series: Amp+™ detailedDescription: Diode 650 V 12A Through Hole TO-247-2 Voltage-DCReverse(Vr)(Max): 650 V OperatingTemperature-Junction: -55°C ~ 175°C datasheetUrl: https://semiq.com/pdf/GP3D012A065B.pdf manufacturerUrl: /en/supplier-centers/global-power-technologies-group Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Package: Tube HTSUS: 8541.10.0080 rolledUpProductId: 11586737 Base Product Number: GP3D012

GP3D010A120A
供应商: DigiKey
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/498/MFG_GP3D0xxAxxxA.jpg Category: Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes standardLeadTime: 28 Weeks Reverse Recovery Time (trr): 0 ns description: DIODE SIL CARB 1.2KV 10A TO220-2 Product Status: Active Supplier Device Package: TO-220-2 manufacturer: SemiQ manufacturerProductNumber: GP3D010A120A SupplierDevicePackage: TO-220-2 BaseProductNumber: GP3D010 Voltage-Forward(Vf)(Max)@If: 1.65 V @ 10 A Package / Case: TO-220-2 Technology: SiC (Silicon Carbide) Schottky Mfr: SemiQ Current-AverageRectified(Io): 10A Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Operating Temperature - Junction: -55°C ~ 175°C Current-ReverseLeakage@Vr: 20 µA @ 1200 V Speed: No Recovery Time > 500mA (Io) isNormallyStocking: True Capacitance @ Vr, F: 608pF @ 1V, 1MHz RoHSStatus: ROHS3 Compliant ProductStatus: Active Package/Case: TO-220-2 MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 REACHStatus: REACH Affected rolledUpProductNumber: GP3D010A120A-ND ReverseRecoveryTime(trr): 0 ns MountingType: Through Hole Mounting Type: Through Hole Capacitance@Vr,F: 608pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Series: Amp+™ detailedDescription: Diode 1200 V 10A Through Hole TO-220-2 Voltage-DCReverse(Vr)(Max): 1200 V OperatingTemperature-Junction: -55°C ~ 175°C datasheetUrl: https://semiq.com/pdf/GP3D010A120A.pdf manufacturerUrl: /en/supplier-centers/global-power-technologies-group Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Package: Tube HTSUS: 8541.10.0080 rolledUpProductId: 9808395 Base Product Number: GP3D010

GP3D012A065B
供应商: Anychip Mall

GCMX040B120S1-E1
供应商: DigiKey

GP2D020A120U
供应商: Chip1Cloud