GP3D010A120A
品牌
SEMIQ
供应商
物料参数
lnkProductPhoto: | https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/498/MFG_GP3D0xxAxxxA.jpg |
Category: | Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes |
standardLeadTime: | 28 Weeks |
Reverse Recovery Time (trr): | 0 ns |
description: | DIODE SIL CARB 1.2KV 10A TO220-2 |
Product Status: | Active |
Supplier Device Package: | TO-220-2 |
manufacturer: | SemiQ |
manufacturerProductNumber: | GP3D010A120A |
SupplierDevicePackage: | TO-220-2 |
BaseProductNumber: | GP3D010 |
Voltage-Forward(Vf)(Max)@If: | 1.65 V @ 10 A |
Package / Case: | TO-220-2 |
Technology: | SiC (Silicon Carbide) Schottky |
Mfr: | SemiQ |
Current-AverageRectified(Io): | 10A |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 10A |
Operating Temperature - Junction: | -55°C ~ 175°C |
Current-ReverseLeakage@Vr: | 20 µA @ 1200 V |
Speed: | No Recovery Time > 500mA (Io) |
isNormallyStocking: | True |
Capacitance @ Vr, F: | 608pF @ 1V, 1MHz |
RoHSStatus: | ROHS3 Compliant |
ProductStatus: | Active |
Package/Case: | TO-220-2 |
MoistureSensitivityLevel(MSL): | 1 (Unlimited) |
ECCN: | EAR99 |
REACHStatus: | REACH Affected |
rolledUpProductNumber: | GP3D010A120A-ND |
ReverseRecoveryTime(trr): | 0 ns |
MountingType: | Through Hole |
Mounting Type: | Through Hole |
Capacitance@Vr,F: | 608pF @ 1V, 1MHz |
Current - Reverse Leakage @ Vr: | 20 µA @ 1200 V |
Series: | Amp+™ |
detailedDescription: | Diode 1200 V 10A Through Hole TO-220-2 |
Voltage-DCReverse(Vr)(Max): | 1200 V |
OperatingTemperature-Junction: | -55°C ~ 175°C |
datasheetUrl: | https://semiq.com/pdf/GP3D010A120A.pdf |
manufacturerUrl: | /en/supplier-centers/global-power-technologies-group |
Voltage - Forward (Vf) (Max) @ If: | 1.65 V @ 10 A |
Package: | Tube |
HTSUS: | 8541.10.0080 |
rolledUpProductId: | 9808395 |
Base Product Number: | GP3D010 |