GP3D010A120A

品牌
SEMIQ
供应商

物料参数

lnkProductPhoto:https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/498/MFG_GP3D0xxAxxxA.jpg
Category:Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes
standardLeadTime:28 Weeks
Reverse Recovery Time (trr):0 ns
description:DIODE SIL CARB 1.2KV 10A TO220-2
Product Status:Active
Supplier Device Package:TO-220-2
manufacturer:SemiQ
manufacturerProductNumber:GP3D010A120A
SupplierDevicePackage:TO-220-2
BaseProductNumber:GP3D010
Voltage-Forward(Vf)(Max)@If:1.65 V @ 10 A
Package / Case:TO-220-2
Technology:SiC (Silicon Carbide) Schottky
Mfr:SemiQ
Current-AverageRectified(Io):10A
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A
Operating Temperature - Junction:-55°C ~ 175°C
Current-ReverseLeakage@Vr:20 µA @ 1200 V
Speed:No Recovery Time > 500mA (Io)
isNormallyStocking:True
Capacitance @ Vr, F:608pF @ 1V, 1MHz
RoHSStatus:ROHS3 Compliant
ProductStatus:Active
Package/Case:TO-220-2
MoistureSensitivityLevel(MSL):1 (Unlimited)
ECCN:EAR99
REACHStatus:REACH Affected
rolledUpProductNumber:GP3D010A120A-ND
ReverseRecoveryTime(trr):0 ns
MountingType:Through Hole
Mounting Type:Through Hole
Capacitance@Vr,F:608pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr:20 µA @ 1200 V
Series:Amp+™
detailedDescription:Diode 1200 V 10A Through Hole TO-220-2
Voltage-DCReverse(Vr)(Max):1200 V
OperatingTemperature-Junction:-55°C ~ 175°C
datasheetUrl:https://semiq.com/pdf/GP3D010A120A.pdf
manufacturerUrl:/en/supplier-centers/global-power-technologies-group
Voltage - Forward (Vf) (Max) @ If:1.65 V @ 10 A
Package:Tube
HTSUS:8541.10.0080
rolledUpProductId:9808395
Base Product Number:GP3D010