GP3D012A065B

品牌
SEMIQ
供应商

物料参数

lnkProductPhoto:https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/498/MFG_GP3D0xxAxxxB.jpg
Category:Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes
standardLeadTime:28 Weeks
Reverse Recovery Time (trr):0 ns
description:DIODE SIL CARB 650V 12A TO247-2
Product Status:Active
Supplier Device Package:TO-247-2
manufacturer:SemiQ
manufacturerProductNumber:GP3D012A065B
SupplierDevicePackage:TO-247-2
BaseProductNumber:GP3D012
Voltage-Forward(Vf)(Max)@If:1.5 V @ 12 A
Package / Case:TO-247-2
Technology:SiC (Silicon Carbide) Schottky
Mfr:SemiQ
Current-AverageRectified(Io):12A
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A
Operating Temperature - Junction:-55°C ~ 175°C
Current-ReverseLeakage@Vr:30 µA @ 650 V
Speed:No Recovery Time > 500mA (Io)
isNormallyStocking:True
Capacitance @ Vr, F:572pF @ 1V, 1MHz
RoHSStatus:ROHS3 Compliant
ProductStatus:Active
Package/Case:TO-247-2
MoistureSensitivityLevel(MSL):1 (Unlimited)
ECCN:EAR99
REACHStatus:REACH Affected
rolledUpProductNumber:1560-GP3D012A065B-ND
ReverseRecoveryTime(trr):0 ns
MountingType:Through Hole
Mounting Type:Through Hole
Capacitance@Vr,F:572pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr:30 µA @ 650 V
Series:Amp+™
detailedDescription:Diode 650 V 12A Through Hole TO-247-2
Voltage-DCReverse(Vr)(Max):650 V
OperatingTemperature-Junction:-55°C ~ 175°C
datasheetUrl:https://semiq.com/pdf/GP3D012A065B.pdf
manufacturerUrl:/en/supplier-centers/global-power-technologies-group
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 12 A
Package:Tube
HTSUS:8541.10.0080
rolledUpProductId:11586737
Base Product Number:GP3D012