UNITEDSIC
商品列表
UJ3C120080K3S
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1200V 33A TO247-3
Vgs(th)(Max)@Id: 6V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 51 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3C120080 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 33A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 254.2W (Tc) DraintoSourceVoltage(Vdss): 1200 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 100mOhm @ 20A, 12V Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1200V 33A TO247-3
Vgs(th)(Max)@Id: 6V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 51 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3C120080 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 33A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 254.2W (Tc) DraintoSourceVoltage(Vdss): 1200 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 100mOhm @ 20A, 12V Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
UJ3D1210KS
供应商: DigiKey
分类: 二极管 - 整流器 - 单
描述: 1200V 10A SIC SCHOTTKY DIODE G3,
Current-ReverseLeakage@Vr: 110 µA @ 1200 V Speed: No Recovery Time > 500mA (Io) Category: Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes ProductStatus: Active Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected ReverseRecoveryTime(trr): 0 ns MountingType: Through Hole Capacitance@Vr,F: 510pF @ 1V, 1MHz Series: - SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3D1210 Voltage-Forward(Vf)(Max)@If: 1.6 V @ 10 A Technology: SiC (Silicon Carbide) Schottky Voltage-DCReverse(Vr)(Max): 1200 V OperatingTemperature-Junction: -55°C ~ 175°C Mfr: UnitedSiC Current-AverageRectified(Io): 10A Package: Tube HTSUS: 8541.10.0080
供应商: DigiKey
分类: 二极管 - 整流器 - 单
描述: 1200V 10A SIC SCHOTTKY DIODE G3,
Current-ReverseLeakage@Vr: 110 µA @ 1200 V Speed: No Recovery Time > 500mA (Io) Category: Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes ProductStatus: Active Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected ReverseRecoveryTime(trr): 0 ns MountingType: Through Hole Capacitance@Vr,F: 510pF @ 1V, 1MHz Series: - SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3D1210 Voltage-Forward(Vf)(Max)@If: 1.6 V @ 10 A Technology: SiC (Silicon Carbide) Schottky Voltage-DCReverse(Vr)(Max): 1200 V OperatingTemperature-Junction: -55°C ~ 175°C Mfr: UnitedSiC Current-AverageRectified(Io): 10A Package: Tube HTSUS: 8541.10.0080
UJ3D1220KSD
供应商: DigiKey
分类: 二极管 - 整流器 - 单
描述: 1200V 20A SIC SCHOTTKY DIODE G3,
制造商: UnitedSiC 系列: - 包装: 管件 零件状态: 有源 二极管类型: 碳化硅肖特基 电流 - 平均整流 (Io): 10A（DC） 速度: 无恢复时间 > 500mA（Io） 不同 Vr、F 时电容: 1020pF @ 1V，1MHz 安装类型: 通孔 封装/外壳: TO-247-3 供应商器件封装: TO-247-3 工作温度 - 结: -55°C ~ 175°C 电压 - DC 反向 (Vr)（最大值）: 1200 V 反向恢复时间 (trr): 0 ns 不同 If 时电压 - 正向 (Vf): 1.6 V @ 10 A 不同 Vr 时电流 - 反向泄漏: 220 µA @ 1200 V 基本产品编号: UJ3D1220
供应商: DigiKey
分类: 二极管 - 整流器 - 单
描述: 1200V 20A SIC SCHOTTKY DIODE G3,
制造商: UnitedSiC 系列: - 包装: 管件 零件状态: 有源 二极管类型: 碳化硅肖特基 电流 - 平均整流 (Io): 10A（DC） 速度: 无恢复时间 > 500mA（Io） 不同 Vr、F 时电容: 1020pF @ 1V，1MHz 安装类型: 通孔 封装/外壳: TO-247-3 供应商器件封装: TO-247-3 工作温度 - 结: -55°C ~ 175°C 电压 - DC 反向 (Vr)（最大值）: 1200 V 反向恢复时间 (trr): 0 ns 不同 If 时电压 - 正向 (Vf): 1.6 V @ 10 A 不同 Vr 时电流 - 反向泄漏: 220 µA @ 1200 V 基本产品编号: UJ3D1220
UF3C170400K3S
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1700V 7.6A TO247-3
Vgs(th)(Max)@Id: 6V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 27.5 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UF3C170400 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 7.6A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 100W (Tc) DraintoSourceVoltage(Vdss): 1700 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 515mOhm @ 5A, 12V Package/Case: TO-247-3 ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 740 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1700V 7.6A TO247-3
Vgs(th)(Max)@Id: 6V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 27.5 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UF3C170400 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 7.6A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 100W (Tc) DraintoSourceVoltage(Vdss): 1700 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 515mOhm @ 5A, 12V Package/Case: TO-247-3 ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 740 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
UJ3C120070K3S
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1200V 34.5A TO247-3
Vgs(th)(Max)@Id: 6V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 46 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3C120070 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 34.5A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 254.2W (Tc) DraintoSourceVoltage(Vdss): 1200 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 90mOhm @ 20A, 12V Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1200V 34.5A TO247-3
Vgs(th)(Max)@Id: 6V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 46 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3C120070 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 34.5A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 254.2W (Tc) DraintoSourceVoltage(Vdss): 1200 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 90mOhm @ 20A, 12V Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 1500 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
UJ3D1725K2
供应商: DigiKey
分类: 二极管 - 整流器 - 单
描述: 1700V 25A SIC SCHOTTKY DIODE G3,
Current-ReverseLeakage@Vr: 360 µA @ 1700 V Speed: No Recovery Time > 500mA (Io) Category: Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes ProductStatus: Active Package/Case: TO-247-2 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected ReverseRecoveryTime(trr): 0 ns MountingType: Through Hole Capacitance@Vr,F: 1500pF @ 1V, 1MHz Series: Automotive, AEC-Q101 SupplierDevicePackage: TO-247-2 BaseProductNumber: UJ3D1725 Voltage-Forward(Vf)(Max)@If: 1.7 V @ 25 A Technology: SiC (Silicon Carbide) Schottky Voltage-DCReverse(Vr)(Max): 1700 V OperatingTemperature-Junction: -55°C ~ 175°C Mfr: UnitedSiC Current-AverageRectified(Io): 25A Package: Tube HTSUS: 8541.10.0080
供应商: DigiKey
分类: 二极管 - 整流器 - 单
描述: 1700V 25A SIC SCHOTTKY DIODE G3,
Current-ReverseLeakage@Vr: 360 µA @ 1700 V Speed: No Recovery Time > 500mA (Io) Category: Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes ProductStatus: Active Package/Case: TO-247-2 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected ReverseRecoveryTime(trr): 0 ns MountingType: Through Hole Capacitance@Vr,F: 1500pF @ 1V, 1MHz Series: Automotive, AEC-Q101 SupplierDevicePackage: TO-247-2 BaseProductNumber: UJ3D1725 Voltage-Forward(Vf)(Max)@If: 1.7 V @ 25 A Technology: SiC (Silicon Carbide) Schottky Voltage-DCReverse(Vr)(Max): 1700 V OperatingTemperature-Junction: -55°C ~ 175°C Mfr: UnitedSiC Current-AverageRectified(Io): 25A Package: Tube HTSUS: 8541.10.0080
UJ3C120150K3S
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1200V 18.4A TO247-3
Vgs(th)(Max)@Id: 5.5V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 30 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3C120150 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 18.4A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 166.7W (Tc) DraintoSourceVoltage(Vdss): 1200 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 180mOhm @ 5A, 12V Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 738 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095
供应商: DigiKey
分类: 晶体管 - FET，MOSFET - 单个
描述: SICFET N-CH 1200V 18.4A TO247-3
Vgs(th)(Max)@Id: 5.5V @ 10mA Category: Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FETFeature: - DriveVoltage(MaxRdsOn,MinRdsOn): 12V GateCharge(Qg)(Max)@Vgs: 30 nC @ 15 V SupplierDevicePackage: TO-247-3 BaseProductNumber: UJ3C120150 Technology: SiCFET (Cascode SiCJFET) Current-ContinuousDrain(Id)@25°C: 18.4A (Tc) Vgs(Max): ±25V Mfr: UnitedSiC PowerDissipation(Max): 166.7W (Tc) DraintoSourceVoltage(Vdss): 1200 V OperatingTemperature: -55°C ~ 175°C (TJ) ProductStatus: Active RdsOn(Max)@Id,Vgs: 180mOhm @ 5A, 12V Package/Case: TO-247-3 MoistureSensitivityLevel(MSL): Not Applicable ECCN: EAR99 REACHStatus: REACH Unaffected MountingType: Through Hole InputCapacitance(Ciss)(Max)@Vds: 738 pF @ 100 V Series: - FETType: N-Channel Package: Tube HTSUS: 8541.29.0095