INTERFET
InterFET Corporation is a privately held company incorporated in the State of Texas. InterFET is a leading manufacturer and global supplier of discrete Junction Field Effect Transistors (JFETs), Custom Integrated Circuits, Hybrid Integrated Circuits (MCM-C) and related semiconductor devices.
商品列表
2N4393
供应商: Mouser Electronics
分类: JFET
描述: JFET N-Channel 50mA
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2957/MFG_2N4393-TO-18-3L.jpg Category: Discrete Semiconductor ProductsTransistorsJFETs Voltage-Breakdown(V(BR)GSS): 40 V standardLeadTime: 1 Weeks FET Type: N-Channel Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V description: JFET N-CH 40V TO18-3 Resistance - RDS(On): 100 Ohms Resistance-RDS(On): 100 Ohms Product Status: Active Voltage-Cutoff(VGSoff)@Id: 500 mV @ 1 nA Supplier Device Package: TO-18-3 manufacturer: Linear Integrated Systems, Inc. manufacturerProductNumber: 2N4393 TO-18 3L ROHS SupplierDevicePackage: TO-18-3 Package / Case: TO-206AA, TO-18-3 Metal Can Mfr: Linear Integrated Systems, Inc. Current-Drain(Idss)@Vds(Vgs=0): 5 mA @ 20 V Power-Max: 1.8 W Operating Temperature: -55°C ~ 200°C (TJ) isNormallyStocking: True RoHSStatus: ROHS3 Compliant OperatingTemperature: -55°C ~ 200°C (TJ) ProductStatus: Active Package/Case: TO-206AA, TO-18-3 Metal Can MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V REACHStatus: REACH Unaffected rolledUpProductNumber: 4004-2N4393TO-183LROHS-ND MountingType: Through Hole Mounting Type: Through Hole InputCapacitance(Ciss)(Max)@Vds: 14pF @ 20V Series: 2N4393 detailedDescription: JFET N-Channel 40 V 1.8 W Through Hole TO-18-3 FETType: N-Channel datasheetUrl: https://www.linearsystems.com/_files/ugd/7e8069_8de04f65f7d64a48b4e56a09631b7210.pdf manufacturerUrl: /en/supplier-centers/linear-integrated-systems Power - Max: 1.8 W Package: Bulk HTSUS: 8541.29.0095 rolledUpProductId: 14312169 Voltage - Breakdown (V(BR)GSS): 40 V
供应商: Mouser Electronics
分类: JFET
描述: JFET N-Channel 50mA
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2957/MFG_2N4393-TO-18-3L.jpg Category: Discrete Semiconductor ProductsTransistorsJFETs Voltage-Breakdown(V(BR)GSS): 40 V standardLeadTime: 1 Weeks FET Type: N-Channel Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V description: JFET N-CH 40V TO18-3 Resistance - RDS(On): 100 Ohms Resistance-RDS(On): 100 Ohms Product Status: Active Voltage-Cutoff(VGSoff)@Id: 500 mV @ 1 nA Supplier Device Package: TO-18-3 manufacturer: Linear Integrated Systems, Inc. manufacturerProductNumber: 2N4393 TO-18 3L ROHS SupplierDevicePackage: TO-18-3 Package / Case: TO-206AA, TO-18-3 Metal Can Mfr: Linear Integrated Systems, Inc. Current-Drain(Idss)@Vds(Vgs=0): 5 mA @ 20 V Power-Max: 1.8 W Operating Temperature: -55°C ~ 200°C (TJ) isNormallyStocking: True RoHSStatus: ROHS3 Compliant OperatingTemperature: -55°C ~ 200°C (TJ) ProductStatus: Active Package/Case: TO-206AA, TO-18-3 Metal Can MoistureSensitivityLevel(MSL): 1 (Unlimited) ECCN: EAR99 Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V REACHStatus: REACH Unaffected rolledUpProductNumber: 4004-2N4393TO-183LROHS-ND MountingType: Through Hole Mounting Type: Through Hole InputCapacitance(Ciss)(Max)@Vds: 14pF @ 20V Series: 2N4393 detailedDescription: JFET N-Channel 40 V 1.8 W Through Hole TO-18-3 FETType: N-Channel datasheetUrl: https://www.linearsystems.com/_files/ugd/7e8069_8de04f65f7d64a48b4e56a09631b7210.pdf manufacturerUrl: /en/supplier-centers/linear-integrated-systems Power - Max: 1.8 W Package: Bulk HTSUS: 8541.29.0095 rolledUpProductId: 14312169 Voltage - Breakdown (V(BR)GSS): 40 V
P1087-TR
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET P-Channel Reel of 1000
Categoríadeproducto: JFET Fabricante: InterFET Tecnología: Si Estilodemontaje: ThroughHole Paquete/Cubierta: TO-92-2 Polaridaddeltransistor: P-Channel Configuración: Single Vds-Tensióndisruptivaentredrenajeyfuente: -15V Vds-Tensióndisruptivaentrepuertayfuente: 30V CorrientedelafuentededrenajeenVGS=0: -5mA Id-Corrientededrenajecontinua: -3mA RdsOn-Resistenciaentredrenajeyfuente: 150Ohms Dp-Disipacióndepotencia: 360mW Serie: P108 Empaquetado: Reel Marca: InterFET Voltajedecortepuerta-fuente: 5V Cantidaddeempaquedefábrica: 1000 Tipo: JFET Aliasdelaspiezasn.º: P1087
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET P-Channel Reel of 1000
Categoríadeproducto: JFET Fabricante: InterFET Tecnología: Si Estilodemontaje: ThroughHole Paquete/Cubierta: TO-92-2 Polaridaddeltransistor: P-Channel Configuración: Single Vds-Tensióndisruptivaentredrenajeyfuente: -15V Vds-Tensióndisruptivaentrepuertayfuente: 30V CorrientedelafuentededrenajeenVGS=0: -5mA Id-Corrientededrenajecontinua: -3mA RdsOn-Resistenciaentredrenajeyfuente: 150Ohms Dp-Disipacióndepotencia: 360mW Serie: P108 Empaquetado: Reel Marca: InterFET Voltajedecortepuerta-fuente: 5V Cantidaddeempaquedefábrica: 1000 Tipo: JFET Aliasdelaspiezasn.º: P1087
IFN5199
供应商: Mouser Electronics
分类: JFET
描述: JFET Dual JFET N-CH -50V 50mA 250mW 2.6mW
ProductCategory: JFET Manufacturer: InterFET Technology: Si MountingStyle: ThroughHole Package/Case: TO-71-3 TransistorPolarity: N-Channel Configuration: Dual Vds-Drain-SourceBreakdownVoltage: 20V Vgs-Gate-SourceBreakdownVoltage: -50V Drain-SourceCurrentatVgs=0: 7mA Id-ContinuousDrainCurrent: -200uA Pd-PowerDissipation: 250mW Series: IFN519 Packaging: Bulk Brand: InterFET ForwardTransconductance-Min: 1mS Gate-SourceCutoffVoltage: -4V FactoryPackQuantity: 79 Type: JFET Part#Aliases: 2N5199
供应商: Mouser Electronics
分类: JFET
描述: JFET Dual JFET N-CH -50V 50mA 250mW 2.6mW
ProductCategory: JFET Manufacturer: InterFET Technology: Si MountingStyle: ThroughHole Package/Case: TO-71-3 TransistorPolarity: N-Channel Configuration: Dual Vds-Drain-SourceBreakdownVoltage: 20V Vgs-Gate-SourceBreakdownVoltage: -50V Drain-SourceCurrentatVgs=0: 7mA Id-ContinuousDrainCurrent: -200uA Pd-PowerDissipation: 250mW Series: IFN519 Packaging: Bulk Brand: InterFET ForwardTransconductance-Min: 1mS Gate-SourceCutoffVoltage: -4V FactoryPackQuantity: 79 Type: JFET Part#Aliases: 2N5199
2N4861A
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET N-Channel -30V 1.8W 10mW 50mA
Vgs-Gate-SourceBreakdownVoltage: -30V Configuration: Single FactoryPackQuantity: 1 Vds-Drain-SourceBreakdownVoltage: 15V ProductType: JFETs Package/Case: TO-18-3 TransistorPolarity: N-Channel RoHS: RoHS Compliant Pd-PowerDissipation: 1.8W Brand: InterFET RdsOn-Drain-SourceResistance: 60Ohms Series: 2N486 MountingStyle: ThroughHole Type: JFET UnitWeight: 1.784333oz Id-ContinuousDrainCurrent: 500pA Technology: Si Subcategory: Transistors Drain-SourceCurrentatVgs=0: 80mA Manufacturer: InterFET ProductCategory: JFET Packaging: Bulk Gate-SourceCutoffVoltage: -4V
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET N-Channel -30V 1.8W 10mW 50mA
Vgs-Gate-SourceBreakdownVoltage: -30V Configuration: Single FactoryPackQuantity: 1 Vds-Drain-SourceBreakdownVoltage: 15V ProductType: JFETs Package/Case: TO-18-3 TransistorPolarity: N-Channel RoHS: RoHS Compliant Pd-PowerDissipation: 1.8W Brand: InterFET RdsOn-Drain-SourceResistance: 60Ohms Series: 2N486 MountingStyle: ThroughHole Type: JFET UnitWeight: 1.784333oz Id-ContinuousDrainCurrent: 500pA Technology: Si Subcategory: Transistors Drain-SourceCurrentatVgs=0: 80mA Manufacturer: InterFET ProductCategory: JFET Packaging: Bulk Gate-SourceCutoffVoltage: -4V
2N2609
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET P-Channel -30V 50mA 300mW 2mW
Vgs-Gate-SourceBreakdownVoltage: -30V ForwardTransconductance-Min: 25mS Configuration: Single FactoryPackQuantity: 1 Vds-Drain-SourceBreakdownVoltage: -10V ProductType: JFETs Package/Case: TO-18-3 TransistorPolarity: P-Channel RoHS: RoHS Compliant Pd-PowerDissipation: 300mW Brand: InterFET Series: 2N26 MountingStyle: ThroughHole Type: JFET UnitWeight: 0.042461oz Id-ContinuousDrainCurrent: 5mA Technology: Si Subcategory: Transistors Drain-SourceCurrentatVgs=0: -10mA Manufacturer: InterFET ProductCategory: JFET Packaging: Bulk Gate-SourceCutoffVoltage: 4V
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET P-Channel -30V 50mA 300mW 2mW
Vgs-Gate-SourceBreakdownVoltage: -30V ForwardTransconductance-Min: 25mS Configuration: Single FactoryPackQuantity: 1 Vds-Drain-SourceBreakdownVoltage: -10V ProductType: JFETs Package/Case: TO-18-3 TransistorPolarity: P-Channel RoHS: RoHS Compliant Pd-PowerDissipation: 300mW Brand: InterFET Series: 2N26 MountingStyle: ThroughHole Type: JFET UnitWeight: 0.042461oz Id-ContinuousDrainCurrent: 5mA Technology: Si Subcategory: Transistors Drain-SourceCurrentatVgs=0: -10mA Manufacturer: InterFET ProductCategory: JFET Packaging: Bulk Gate-SourceCutoffVoltage: 4V
IFN5433
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET N-Channel
Categoríadeproducto: JFET Fabricante: InterFET Estilodemontaje: ThroughHole Paquete/Cubierta: TO-52-3 Polaridaddeltransistor: N-Channel Configuración: Single Vds-Tensióndisruptivaentredrenajeyfuente: 15V Vds-Tensióndisruptivaentrepuertayfuente: -25V CorrientedelafuentededrenajeenVGS=0: 100mA Id-Corrientededrenajecontinua: 10mA RdsOn-Resistenciaentredrenajeyfuente: 7Ohms Dp-Disipacióndepotencia: 300mW Serie: IFN543 Empaquetado: Bulk Marca: InterFET Voltajedecortepuerta-fuente: -9V Cantidaddeempaquedefábrica: 92 Tecnología: Si Aliasdelaspiezasn.º: 2N5433
供应商: Mouser Electronics
分类: JFET
描述: JFET JFET N-Channel
Categoríadeproducto: JFET Fabricante: InterFET Estilodemontaje: ThroughHole Paquete/Cubierta: TO-52-3 Polaridaddeltransistor: N-Channel Configuración: Single Vds-Tensióndisruptivaentredrenajeyfuente: 15V Vds-Tensióndisruptivaentrepuertayfuente: -25V CorrientedelafuentededrenajeenVGS=0: 100mA Id-Corrientededrenajecontinua: 10mA RdsOn-Resistenciaentredrenajeyfuente: 7Ohms Dp-Disipacióndepotencia: 300mW Serie: IFN543 Empaquetado: Bulk Marca: InterFET Voltajedecortepuerta-fuente: -9V Cantidaddeempaquedefábrica: 92 Tecnología: Si Aliasdelaspiezasn.º: 2N5433
2N4340
供应商: Mouser Electronics
分类: JFET
描述: JFET N-Channel 50mA
Категорияпродукта: JFET Производитель: InterFET Видмонтажа: ThroughHole Упаковка/блок: TO-18-3 Полярностьтранзистора: N-Channel Конфигурация: Single Vds-напряжениепробоясток-исток: 15V Vds-напряжениепробоязатвор-исток: -50V ТокстокаприVgs=0: 3.6mA Id-непрерывныйтокутечки: 100pA RdsВкл-сопротивлениесток-исток: 1.5kOhms Pd-рассеиваниемощности: 300mW Серия: 2N43 Упаковка: Bulk Торговаямарка: InterFET Крутизнахарактеристикипрямойпередачи-Мин.: 1300uS Напряжениеотсечкизатвор-исток: -3V Размерфабричнойупаковки: 92 Технология: Si
供应商: Mouser Electronics
分类: JFET
描述: JFET N-Channel 50mA
Категорияпродукта: JFET Производитель: InterFET Видмонтажа: ThroughHole Упаковка/блок: TO-18-3 Полярностьтранзистора: N-Channel Конфигурация: Single Vds-напряжениепробоясток-исток: 15V Vds-напряжениепробоязатвор-исток: -50V ТокстокаприVgs=0: 3.6mA Id-непрерывныйтокутечки: 100pA RdsВкл-сопротивлениесток-исток: 1.5kOhms Pd-рассеиваниемощности: 300mW Серия: 2N43 Упаковка: Bulk Торговаямарка: InterFET Крутизнахарактеристикипрямойпередачи-Мин.: 1300uS Напряжениеотсечкизатвор-исток: -3V Размерфабричнойупаковки: 92 Технология: Si
IFN423
供应商: Mouser Electronics
分类: JFET
描述: JFET
Categoríadeproducto: JFET Fabricante: InterFET Estilodemontaje: ThroughHole Paquete/Cubierta: TO-78-3 Polaridaddeltransistor: N-Channel Configuración: Dual Vds-Tensióndisruptivaentredrenajeyfuente: 10V Vds-Tensióndisruptivaentrepuertayfuente: -60V CorrientedelafuentededrenajeenVGS=0: 1mA Id-Corrientededrenajecontinua: 30uA Dp-Disipacióndepotencia: 400mW Serie: IFN423 Empaquetado: Bulk Marca: InterFET Transconductanciahaciadelante-Mín.: 100uS Voltajedecortepuerta-fuente: -2V Tecnología: Si
供应商: Mouser Electronics
分类: JFET
描述: JFET
Categoríadeproducto: JFET Fabricante: InterFET Estilodemontaje: ThroughHole Paquete/Cubierta: TO-78-3 Polaridaddeltransistor: N-Channel Configuración: Dual Vds-Tensióndisruptivaentredrenajeyfuente: 10V Vds-Tensióndisruptivaentrepuertayfuente: -60V CorrientedelafuentededrenajeenVGS=0: 1mA Id-Corrientededrenajecontinua: 30uA Dp-Disipacióndepotencia: 400mW Serie: IFN423 Empaquetado: Bulk Marca: InterFET Transconductanciahaciadelante-Mín.: 100uS Voltajedecortepuerta-fuente: -2V Tecnología: Si
IF1322B
供应商: Mouser Electronics
分类: JFET
描述: JFET N-Ch Matched -20V 10mA 480mW 3.8mW
ProductCategory: JFET Manufacturer: InterFET Technology: Si MountingStyle: SMD/SMT Package/Case: SOIC-8 TransistorPolarity: N-Channel Configuration: Dual Vds-Drain-SourceBreakdownVoltage: 10V Vgs-Gate-SourceBreakdownVoltage: -20V Drain-SourceCurrentatVgs=0: 25mA Id-ContinuousDrainCurrent: 1uA Pd-PowerDissipation: 480mW MaximumOperatingTemperature: +150C Series: IF132 Packaging: Bulk Brand: InterFET ForwardTransconductance-Min: 0.01mS Gate-SourceCutoffVoltage: -1.5V FactoryPackQuantity: 31 Type: JFET UnitWeight: 0.019048oz
供应商: Mouser Electronics
分类: JFET
描述: JFET N-Ch Matched -20V 10mA 480mW 3.8mW
ProductCategory: JFET Manufacturer: InterFET Technology: Si MountingStyle: SMD/SMT Package/Case: SOIC-8 TransistorPolarity: N-Channel Configuration: Dual Vds-Drain-SourceBreakdownVoltage: 10V Vgs-Gate-SourceBreakdownVoltage: -20V Drain-SourceCurrentatVgs=0: 25mA Id-ContinuousDrainCurrent: 1uA Pd-PowerDissipation: 480mW MaximumOperatingTemperature: +150C Series: IF132 Packaging: Bulk Brand: InterFET ForwardTransconductance-Min: 0.01mS Gate-SourceCutoffVoltage: -1.5V FactoryPackQuantity: 31 Type: JFET UnitWeight: 0.019048oz
