WOLFSPEED
Wolfspeed, A Cree Company, stands alone as the premier provider of the most field-tested SiC and GaN Power and RF solutions in the world. As the leader in wide bandgap semiconductor technology, we partner with the world's designers to build a new future of faster, smaller, lighter and more powerful electronic systems.
商品列表
CGH40120F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV40200PP-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board for CGHV50200PP
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: DemonstrationBoards Type: RFAmplifiers ToolIsForEvaluationOf: CGHV40200PP Frequency: 2.7GHz OperatingSupplyVoltage: 50V Packaging: Bulk Brand: Wolfspeed/Cree MaximumOperatingTemperature: +150C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board for CGHV50200PP
ProductCategory: RFDevelopmentTools Manufacturer: Cree,Inc. Product: DemonstrationBoards Type: RFAmplifiers ToolIsForEvaluationOf: CGHV40200PP Frequency: 2.7GHz OperatingSupplyVoltage: 50V Packaging: Bulk Brand: Wolfspeed/Cree MaximumOperatingTemperature: +150C MinimumOperatingTemperature: -40C FactoryPackQuantity: 2
CGHV14500F
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt
CGH27030P
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT VHF-3.0GHz, 30 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 15dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10V,2V Id-ContinuousDrainCurrent: 7A OutputPower: 30W MaximumDrainGateVoltage: 28V MaximumOperatingTemperature: +150C Pd-PowerDissipation: 14W MountingStyle: SMD/SMT Package/Case: 440196 Packaging: Bulk Brand: Wolfspeed/Cree Configuration: Single ForwardTransconductance-Min: - MinimumOperatingTemperature: -40C NF-NoiseFigure: 3dB OperatingFrequency: 2.7GHz FactoryPackQuantity: 1 Vgsth-Gate-SourceThresholdVoltage: -3.8V
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT VHF-3.0GHz, 30 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 15dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 120V Vgs-Gate-SourceBreakdownVoltage: -10V,2V Id-ContinuousDrainCurrent: 7A OutputPower: 30W MaximumDrainGateVoltage: 28V MaximumOperatingTemperature: +150C Pd-PowerDissipation: 14W MountingStyle: SMD/SMT Package/Case: 440196 Packaging: Bulk Brand: Wolfspeed/Cree Configuration: Single ForwardTransconductance-Min: - MinimumOperatingTemperature: -40C NF-NoiseFigure: 3dB OperatingFrequency: 2.7GHz FactoryPackQuantity: 1 Vgsth-Gate-SourceThresholdVoltage: -3.8V
CG2H40045F-TB
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
供应商: Mouser Electronics
分类: RF Development Tools
描述: RF Development Tools Test Board without GaN HEMT
CGHV1F006S
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 16dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 950mA OutputPower: 6W MaximumDrainGateVoltage: - MaximumOperatingTemperature: +150C Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DFN-12 Packaging: Reel Packaging: MouseReel Packaging: CutTape Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - MinimumOperatingTemperature: -40C MoistureSensitive: Yes NF-NoiseFigure: - OperatingFrequency: 18GHz OperatingTemperatureRange: -40Cto+150C P1dB-CompressionPoint: - RdsOn-Drain-SourceResistance: - FactoryPackQuantity: 250 Vgsth-Gate-SourceThresholdVoltage: -3V
供应商: Mouser Electronics
分类: RF JFET Transistors
描述: RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
ProductCategory: RFJFETTransistors Manufacturer: Cree,Inc. TransistorType: HEMT Technology: GaN Gain: 16dB TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Vgs-Gate-SourceBreakdownVoltage: -10Vto+2V Id-ContinuousDrainCurrent: 950mA OutputPower: 6W MaximumDrainGateVoltage: - MaximumOperatingTemperature: +150C Pd-PowerDissipation: - MountingStyle: SMD/SMT Package/Case: DFN-12 Packaging: Reel Packaging: MouseReel Packaging: CutTape Application: - Brand: Wolfspeed/Cree Class: - Configuration: Single ForwardTransconductance-Min: - Gate-SourceCutoffVoltage: - MinimumOperatingTemperature: -40C MoistureSensitive: Yes NF-NoiseFigure: - OperatingFrequency: 18GHz OperatingTemperatureRange: -40Cto+150C P1dB-CompressionPoint: - RdsOn-Drain-SourceResistance: - FactoryPackQuantity: 250 Vgsth-Gate-SourceThresholdVoltage: -3V
C3M0065100J
供应商: RS
分类: MOSFET
描述: MOSFET 1000V 65mOhm G3 SiC TO-263-7
通道类型: N 最大连续漏极电流: 35 A 最大漏源电压: 1000 V 封装类型: TO-263 安装类型: 表面贴装 引脚数目: 7 最大漏源电阻值: 65 mΩ 通道模式: 增强 最大栅阈值电压: 3.5V 最小栅阈值电压: 1.8V 最大功率耗散: 113.5 W 晶体管配置: 单 最大栅源电压: -8 V 、 19 V 每片芯片元件数目: 1 最低工作温度: -55 °C 高度: 4.57mm 宽度: 9.12mm 晶体管材料: SiC 长度: 10.23mm 典型栅极电荷@Vgs: 35 常闭 @ 4/15V 最高工作温度: +150 °C
供应商: RS
分类: MOSFET
描述: MOSFET 1000V 65mOhm G3 SiC TO-263-7
通道类型: N 最大连续漏极电流: 35 A 最大漏源电压: 1000 V 封装类型: TO-263 安装类型: 表面贴装 引脚数目: 7 最大漏源电阻值: 65 mΩ 通道模式: 增强 最大栅阈值电压: 3.5V 最小栅阈值电压: 1.8V 最大功率耗散: 113.5 W 晶体管配置: 单 最大栅源电压: -8 V 、 19 V 每片芯片元件数目: 1 最低工作温度: -55 °C 高度: 4.57mm 宽度: 9.12mm 晶体管材料: SiC 长度: 10.23mm 典型栅极电荷@Vgs: 35 常闭 @ 4/15V 最高工作温度: +150 °C
C4D08120A
供应商: RS
分类: 整流二极管和肖特基二极管
描述: Wolfspeed 二极管 肖特基, 峰值反向重复电压 1200V, 2引脚 TO-220封装, 最高工作温度 +175 °C
安装类型: 通孔 封装类型: TO-220 最大连续正向电流: 23A 峰值反向重复电压: 1200V 二极管配置: 单路 二极管类型: 碳化硅肖特基 引脚数目: 2 最大正向电压降: 3V 每片芯片元件数目: 1 二极管技术: 碳化硅肖特基 峰值非重复正向浪涌电流: 600A
供应商: RS
分类: 整流二极管和肖特基二极管
描述: Wolfspeed 二极管 肖特基, 峰值反向重复电压 1200V, 2引脚 TO-220封装, 最高工作温度 +175 °C
安装类型: 通孔 封装类型: TO-220 最大连续正向电流: 23A 峰值反向重复电压: 1200V 二极管配置: 单路 二极管类型: 碳化硅肖特基 引脚数目: 2 最大正向电压降: 3V 每片芯片元件数目: 1 二极管技术: 碳化硅肖特基 峰值非重复正向浪涌电流: 600A
C2D10120A
供应商: RS
分类: 整流器和肖特基二极管
描述: Wolfspeed 二极管 C2D10120A 肖特基, Io=25A, Vrev=1200V, 2引脚 TO-220封装
最大连续正向电流: 25A 二极管配置: 单路 每片芯片元件数目: 1 峰值反向重复电压: 1200V 安装类型: 通孔 封装类型: TO-220 二极管类型: 碳化硅肖特基 二极管技术: 碳化硅肖特基 引脚数目: 2 最大正向电压降: 3V 长度: 10.41mm 宽度: 4.7mm 高度: 15.62mm 最高工作温度: +175 °C 尺寸: 10.41 x 4.7 x 15.62mm 峰值反向电流: 1mA 最低工作温度: -55 °C 峰值非重复正向浪涌电流: 250A
供应商: RS
分类: 整流器和肖特基二极管
描述: Wolfspeed 二极管 C2D10120A 肖特基, Io=25A, Vrev=1200V, 2引脚 TO-220封装
最大连续正向电流: 25A 二极管配置: 单路 每片芯片元件数目: 1 峰值反向重复电压: 1200V 安装类型: 通孔 封装类型: TO-220 二极管类型: 碳化硅肖特基 二极管技术: 碳化硅肖特基 引脚数目: 2 最大正向电压降: 3V 长度: 10.41mm 宽度: 4.7mm 高度: 15.62mm 最高工作温度: +175 °C 尺寸: 10.41 x 4.7 x 15.62mm 峰值反向电流: 1mA 最低工作温度: -55 °C 峰值非重复正向浪涌电流: 250A