NE681M13-T3-A

品牌
供应商
分类
RF BJT
描述
Trans RF BJT NPN 10V 0.065A 3-Pin Case M-130 T/R

物料参数

EU RoHS:Compliant
Material:Si
Type:NPN
Configuration:Single
Number of Elements per Chip:1
Maximum Collector Emitter Voltage (V):10
Maximum Collector Base Voltage (V):20
Maximum Emitter Base Voltage (V):1.5
Maximum DC Collector Current (A):0.065
Maximum Power Dissipation (mW):140
Minimum DC Current Gain:80@7mA@3V
Minimum DC Current Gain Range:50 to 120
Maximum Transition Frequency (MHz):7000(Typ)
Maximum Noise Figure (dB):2.7
Minimum Operating Temperature (°C):-65
Maximum Operating Temperature (°C):150
Temperature Flag:Stg/Jun
Operational Bias Conditions:3V/7mA
Typical Power Gain (dB):12
Maximum Emitter Cut-Off Current (nA):800
Packaging:Tape and Reel
Maximum DC Collector Current Range (A):0.06 to 0.12
Maximum Collector Emitter Voltage Range (V):<20
Maximum Collector Cut-Off Current (nA):800
Mounting:Surface Mount
Package Height (mm):0.5
Package Length (mm):1
Package Width (mm):0.5