NE663M04-T2-A
品牌
供应商
分类
RF BJT
描述
Trans RF BJT NPN 3.3V 0.1A 4-Pin Thin-Type Super Mini-Mold T/R
物料参数
| EU RoHS: | Compliant |
| Material: | Si |
| Type: | NPN |
| Configuration: | Single Dual Emitter |
| Number of Elements per Chip: | 1 |
| Maximum Collector Emitter Voltage (V): | 3.3 |
| Maximum Collector Base Voltage (V): | 15 |
| Maximum Emitter Base Voltage (V): | 1.5 |
| Maximum DC Collector Current (A): | 0.1 |
| Maximum Power Dissipation (mW): | 190 |
| Minimum DC Current Gain: | 50@10mA@2V |
| Minimum DC Current Gain Range: | 50 to 120 |
| Maximum Transition Frequency (MHz): | 15000(Typ) |
| Quantity per Packaging (Pieces): | 3000 |
| Maximum Noise Figure (dB): | 1.7 |
| Minimum Operating Temperature (°C): | -65 |
| Maximum Operating Temperature (°C): | 150 |
| Temperature Flag: | Stg/Jun |
| Maximum Power 1dB Compression (dBm): | 17(Typ) |
| Operational Bias Conditions: | 2V/70mA |
| Typical Power Gain (dB): | 11 |
| Maximum 3rd Order Intercept Point (dBm): | 27(Typ) |
| Maximum Emitter Cut-Off Current (nA): | 600 |
| Packaging: | Tape and Reel |
| Maximum DC Collector Current Range (A): | 0.06 to 0.12 |
| Maximum Collector Emitter Voltage Range (V): | <20 |