

NE856M02-T1-AZ
品牌

供应商

分类
RF BJT
描述
Trans RF BJT NPN 12V 0.1A 4-Pin(3+Tab) SOT-89 T/R
物料参数
EU RoHS: | Compliant |
Material: | Si |
Type: | NPN |
Configuration: | Single Dual Emitter |
Number of Elements per Chip: | 1 |
Maximum Collector Emitter Voltage (V): | 12 |
Maximum Collector Base Voltage (V): | 20 |
Maximum Emitter Base Voltage (V): | 3 |
Maximum DC Collector Current (A): | 0.1 |
Maximum Power Dissipation (mW): | 1200 |
Minimum DC Current Gain: | 50@20mA@10V |
Minimum DC Current Gain Range: | 50 to 120 |
Maximum Transition Frequency (MHz): | 6500(Typ) |
Quantity per Packaging (Pieces): | 1000 |
Maximum Noise Figure (dB): | 3 |
Minimum Operating Temperature (°C): | -65 |
Maximum Operating Temperature (°C): | 150 |
Temperature Flag: | Stg/Jun |
Operational Bias Conditions: | 10V/20mA |
Typical Power Gain (dB): | 12 |
Maximum Emitter Cut-Off Current (nA): | 1000 |
Packaging: | Tape and Reel |
Maximum DC Collector Current Range (A): | 0.06 to 0.12 |
Maximum Collector Emitter Voltage Range (V): | <20 |
Maximum Collector Cut-Off Current (nA): | 1000 |
Mounting: | Surface Mount |
Package Height (mm): | 1.5 |