NE856M02-T1-AZ

品牌
供应商
分类
RF BJT
描述
Trans RF BJT NPN 12V 0.1A 4-Pin(3+Tab) SOT-89 T/R

物料参数

EU RoHS:Compliant
Material:Si
Type:NPN
Configuration:Single Dual Emitter
Number of Elements per Chip:1
Maximum Collector Emitter Voltage (V):12
Maximum Collector Base Voltage (V):20
Maximum Emitter Base Voltage (V):3
Maximum DC Collector Current (A):0.1
Maximum Power Dissipation (mW):1200
Minimum DC Current Gain:50@20mA@10V
Minimum DC Current Gain Range:50 to 120
Maximum Transition Frequency (MHz):6500(Typ)
Quantity per Packaging (Pieces):1000
Maximum Noise Figure (dB):3
Minimum Operating Temperature (°C):-65
Maximum Operating Temperature (°C):150
Temperature Flag:Stg/Jun
Operational Bias Conditions:10V/20mA
Typical Power Gain (dB):12
Maximum Emitter Cut-Off Current (nA):1000
Packaging:Tape and Reel
Maximum DC Collector Current Range (A):0.06 to 0.12
Maximum Collector Emitter Voltage Range (V):<20
Maximum Collector Cut-Off Current (nA):1000
Mounting:Surface Mount
Package Height (mm):1.5