XP60AN750IN

品牌
XSEMI
供应商

物料参数

Vgs(th)(Max)@Id:4V @ 250µA
standardLeadTime:26 Weeks
FETFeature:-
Input Capacitance (Ciss) (Max) @ Vds:2688 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:59.2 nC @ 10 V
GateCharge(Qg)(Max)@Vgs:59.2 nC @ 10 V
Product Status:Active
Drain to Source Voltage (Vdss):600 V
SupplierDevicePackage:TO-220CFM
Package / Case:TO-220-3 Full Pack
Technology:MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C:10A (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss):600 V
OperatingTemperature:-55°C ~ 150°C (TJ)
Package/Case:TO-220-3 Full Pack
MoistureSensitivityLevel(MSL):1 (Unlimited)
ECCN:EAR99
rolledUpProductNumber:5048-XP60AN750IN-ND
MountingType:Through Hole
Mounting Type:Through Hole
Rds On (Max) @ Id, Vgs:750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
InputCapacitance(Ciss)(Max)@Vds:2688 pF @ 100 V
detailedDescription:N-Channel 600 V 10A (Tc) 1.92W (Ta), 36.7W (Tc) Through Hole TO-220CFM
FETType:N-Channel
datasheetUrl:http://download.xsemi-corporation.com/datasheet/XP60AN750IN.pdf
manufacturerUrl:/en/supplier-centers/xsemi
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Package:Tube
HTSUS:8541.29.0095
Category:Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
FET Type:N-Channel
description:MOSFET N-CH 600V 0.053A SOT-23
DriveVoltage(MaxRdsOn,MinRdsOn):10V
Supplier Device Package:TO-220CFM
manufacturer:XSemi Corporation
manufacturerProductNumber:XP60AN750IN
Power Dissipation (Max):1.92W (Ta), 36.7W (Tc)
BaseProductNumber:XP60
Vgs(Max):±30V
Mfr:XSemi Corporation
Vgs (Max):±30V
PowerDissipation(Max):1.92W (Ta), 36.7W (Tc)
FET Feature:-
isNormallyStocking:True
RoHSStatus:ROHS3 Compliant
ProductStatus:Active
RdsOn(Max)@Id,Vgs:750mOhm @ 5A, 10V
Series:XP60AN750
rolledUpProductId:19092769
Base Product Number:XP60