CGHV1J006D
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>RF Transis
描述
RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | Cree,Inc. |
| TransistorType: | HEMT |
| Technology: | GaN |
| Gain: | 17dB |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 100V |
| Vgs-Gate-SourceBreakdownVoltage: | -10Vto+2V |
| Id-ContinuousDrainCurrent: | 0.8A |
| OutputPower: | 6W |
| MaximumDrainGateVoltage: | - |
| MaximumOperatingTemperature: | - |
| Pd-PowerDissipation: | - |
| MountingStyle: | SMD/SMT |
| Package/Case: | BareDie |
| Packaging: | GelPack |
| Application: | - |
| Brand: | Wolfspeed/Cree |
| Class: | - |
| Configuration: | Single |
| DevelopmentKit: | - |
| FallTime: | - |
| ForwardTransconductance-Min: | - |
| Gate-SourceCutoffVoltage: | - |
| Height: | 100um |
| Length: | 840um |
| MinimumOperatingTemperature: | - |
| NF-NoiseFigure: | - |
| OperatingFrequency: | 10MHzto18GHz |
| OperatingTemperatureRange: | - |
| P1dB-CompressionPoint: | - |
| Product: | GaNHEMT |
| RdsOn-Drain-SourceResistance: | 2.3Ohms |
| RiseTime: | - |
| FactoryPackQuantity: | 10 |
| TypicalTurn-OffDelayTime: | - |
| Vgsth-Gate-SourceThresholdVoltage: | -3V |
| Width: | 800um |