CGHV59350F
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>RF Transis
描述
RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | Cree,Inc. |
| TransistorType: | HEMT |
| Technology: | GaN |
| Gain: | 11dB |
| Vds-Drain-SourceBreakdownVoltage: | 125V |
| Vgs-Gate-SourceBreakdownVoltage: | -10V,2V |
| OutputPower: | 450W |
| MinimumOperatingTemperature: | -40C |
| MaximumOperatingTemperature: | +85C |
| MountingStyle: | SMD/SMT |
| Packaging: | Tray |
| Brand: | Wolfspeed/Cree |
| Height: | 5.03mm |
| Length: | 24.26mm |
| NumberofChannels: | 1Channel |
| OperatingFrequency: | 5900MHz |
| OperatingTemperatureRange: | -40Cto+85C |
| Product: | C-BandRadarHEMT |
| FactoryPackQuantity: | 15 |
| Vgsth-Gate-SourceThresholdVoltage: | -3V |
| Width: | 23.01mm |