IXTH3N150

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供应商
分类
分立半导体产品>>晶体管 - FET,MOSFET - 单
描述
通孔 N 沟道 1500V 3A(Tc) 250W(Tc) TO-247(IXTH)

物料参数

Vgs(th)(Max)@Id:5V @ 250µA
Category:Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
FETFeature:-
DriveVoltage(MaxRdsOn,MinRdsOn):10V
GateCharge(Qg)(Max)@Vgs:38.6 nC @ 10 V
SupplierDevicePackage:TO-247 (IXTH)
BaseProductNumber:IXTH3
Technology:MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C:3A (Tc)
Vgs(Max):±30V
Mfr:IXYS
CaliforniaProp65:
PowerDissipation(Max):250W (Tc)
RoHSStatus:ROHS3 Compliant
DraintoSourceVoltage(Vdss):1500 V
OperatingTemperature:-55°C ~ 150°C (TJ)
ProductStatus:Active
RdsOn(Max)@Id,Vgs:7.3Ohm @ 1.5A, 10V
Package/Case:TO-247-3
MoistureSensitivityLevel(MSL):1 (Unlimited)
ECCN:EAR99
REACHStatus:REACH Unaffected
MountingType:Through Hole
InputCapacitance(Ciss)(Max)@Vds:1375 pF @ 25 V
Series:-
FETType:N-Channel
Package:Tube
HTSUS:8541.29.0095