CGHV35060MP
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>RF Transis
描述
RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | Cree,Inc. |
| TransistorType: | HEMT |
| Technology: | GaN |
| Gain: | 14.5dB |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 150V |
| Vgs-Gate-SourceBreakdownVoltage: | -10V,2V |
| Id-ContinuousDrainCurrent: | 10.4A |
| OutputPower: | 75W |
| MaximumDrainGateVoltage: | 50V |
| MinimumOperatingTemperature: | -40C |
| MaximumOperatingTemperature: | +107C |
| Pd-PowerDissipation: | 52W |
| MountingStyle: | SMD/SMT |
| Packaging: | Reel |
| Packaging: | MouseReel |
| Packaging: | CutTape |
| Application: | SBandRadarandLTEbasestations |
| Brand: | Wolfspeed/Cree |
| Configuration: | Single |
| OperatingFrequency: | 3.5GHz |
| OperatingTemperatureRange: | -40Cto+107C |
| FactoryPackQuantity: | 250 |
| Vgsth-Gate-SourceThresholdVoltage: | -3V |