GS66516B-E01-MR
品牌
GAN SYSTEMS
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 650V, 60A E-Mode GaN
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | GaNSystems |
| Technology: | GaN |
| MountingStyle: | SMD/SMT |
| Package/Case: | GaNPX-5 |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 650V |
| Id-ContinuousDrainCurrent: | 60A |
| RdsOn-Drain-SourceResistance: | 25mOhms |
| Vgsth-Gate-SourceThresholdVoltage: | 1.1V |
| Vgs-Gate-SourceVoltage: | 7V |
| Qg-GateCharge: | 12.1nC |
| MinimumOperatingTemperature: | -55C |
| MaximumOperatingTemperature: | +150C |
| Configuration: | Single |
| ChannelMode: | Enhancement |
| Packaging: | Reel |
| Packaging: | CutTape |
| Brand: | GaNSystems |
| FallTime: | 22ns |
| MoistureSensitive: | Yes |
| Pd-PowerDissipation: | - |
| RiseTime: | 12.4ns |
| Series: | GS66516 |
| FactoryPackQuantity: | 250 |
| TransistorType: | 1N-Channel |
| TypicalTurn-OffDelayTime: | 14.9ns |
| TypicalTurn-OnDelayTime: | 4.6ns |