IRFHM830DTR2PBF
品牌
INTERNATIONAL
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | Infineon |
| Technology: | Si |
| MountingStyle: | SMD/SMT |
| Package/Case: | PQFN-8 |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 30V |
| Id-ContinuousDrainCurrent: | 20A |
| RdsOn-Drain-SourceResistance: | 5.7mOhms |
| Vgs-Gate-SourceVoltage: | 20V |
| Vgsth-Gate-SourceThresholdVoltage: | 1.8V |
| Qg-GateCharge: | 13nC |
| MinimumOperatingTemperature: | -55C |
| MaximumOperatingTemperature: | +150C |
| Packaging: | Reel |
| Brand: | Infineon/IR |
| Configuration: | SingleQuadDrainTripleSource |
| FallTime: | 6.7ns |
| ForwardTransconductance-Min: | 69S |
| Height: | 1.05mm |
| Length: | 3.3mm |
| Pd-PowerDissipation: | 2.8W |
| RiseTime: | 20ns |
| FactoryPackQuantity: | 400 |
| TransistorType: | 1N-Channel |
| TypicalTurn-OffDelayTime: | 9.1ns |
| TypicalTurn-OnDelayTime: | 9.8ns |
| Width: | 3.3mm |
| UnitWeight: | 0.017637oz |