TK5A65DA(STA4,Q,M)
品牌
供应商
分类
分立半导体产品>>晶体管 - FET，MOSFET - 单
描述
通孔 N 沟道 650V 4.5A（Ta） 35W（Tc） TO-220SIS
物料参数
| Vgs(th)(Max)@Id: | 4.4V @ 1mA |
| Category: | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
| FETFeature: | - |
| DriveVoltage(MaxRdsOn,MinRdsOn): | 10V |
| GateCharge(Qg)(Max)@Vgs: | 16 nC @ 10 V |
| SupplierDevicePackage: | TO-220SIS |
| BaseProductNumber: | TK5A65 |
| Technology: | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C: | 4.5A (Ta) |
| Vgs(Max): | ±30V |
| Mfr: | Toshiba Semiconductor and Storage |
| PowerDissipation(Max): | 35W (Tc) |
| RoHSStatus: | ROHS3 Compliant |
| DraintoSourceVoltage(Vdss): | 650 V |
| OperatingTemperature: | 150°C (TJ) |
| ProductStatus: | Active |
| RdsOn(Max)@Id,Vgs: | 1.67Ohm @ 2.3A, 10V |
| Package/Case: | TO-220-3 Full Pack |
| MoistureSensitivityLevel(MSL): | 1 (Unlimited) |
| ECCN: | EAR99 |
| MountingType: | Through Hole |
| InputCapacitance(Ciss)(Max)@Vds: | 700 pF @ 25 V |
| Series: | π-MOSVII |
| FETType: | N-Channel |
| Package: | Tube |
| HTSUS: | 8541.29.0095 |
| 价格梯度 | 价格 |
|---|---|
| 1+ | ¥2.2500 |
| 50+ | ¥1.0936 |
| 500+ | ¥0.7846 |
| 1000+ | ¥0.7213 |
| 2000+ | ¥0.6681 |
| 5000+ | ¥0.6425 |
| 包装：1 | 库存：32 |