SSM6N15AFE,LM
品牌
供应商
分类
分立半导体产品>>晶体管 - FET，MOSFET - 阵列
描述
MOSFET 2N-CH 30V 0.1A ES6
物料参数
| Vgs(th)(Max)@Id: | 1.5V @ 100µA |
| Category: | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays |
| Configuration: | 2 N-Channel (Dual) |
| RoHSStatus: | ROHS3 Compliant |
| FETFeature: | Logic Level Gate |
| DraintoSourceVoltage(Vdss): | 30V |
| OperatingTemperature: | 150°C (TJ) |
| ProductStatus: | Active |
| RdsOn(Max)@Id,Vgs: | 4Ohm @ 10mA, 4V |
| Package/Case: | SOT-563, SOT-666 |
| MoistureSensitivityLevel(MSL): | 1 (Unlimited) |
| ECCN: | EAR99 |
| GateCharge(Qg)(Max)@Vgs: | - |
| MountingType: | Surface Mount |
| InputCapacitance(Ciss)(Max)@Vds: | 13.5pF @ 3V |
| Series: | - |
| SupplierDevicePackage: | ES6 |
| BaseProductNumber: | SSM6N15 |
| Technology: | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C: | 100mA |
| Mfr: | Toshiba Semiconductor and Storage |
| Package: | Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT)Digi-Reel®Digi-Reel® |
| HTSUS: | 8541.21.0095 |
| Power-Max: | 150mW |
| 价格梯度 | 价格 |
|---|---|
| 1+ | ¥0.3100 |
| 10+ | ¥0.1920 |
| 500+ | ¥0.0890 |
| 1000+ | ¥0.0788 |
| 2000+ | ¥0.0703 |
| 包装：1 | 库存：1510 |
| 价格梯度 | 价格 |
|---|---|
| 1+ | ¥0.3100 |
| 10+ | ¥0.1920 |
| 500+ | ¥0.0890 |
| 1000+ | ¥0.0788 |
| 2000+ | ¥0.0703 |
| 包装：1 | 库存：1510 |