TGF2160
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>RF Transis
描述
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | Qorvo |
| TransistorType: | pHEMT |
| Technology: | GaAs |
| Gain: | 10.4dB |
| Vds-Drain-SourceBreakdownVoltage: | 12V |
| Vgs-Gate-SourceBreakdownVoltage: | -7V |
| Id-ContinuousDrainCurrent: | 517mA |
| MinimumOperatingTemperature: | -65C |
| MaximumOperatingTemperature: | +150C |
| Pd-PowerDissipation: | 5.6W |
| MountingStyle: | SMD/SMT |
| Packaging: | Tray |
| Brand: | Qorvo |
| Configuration: | Dual |
| ForwardTransconductance-Min: | 619mS |
| NumberofChannels: | 2Channel |
| OperatingFrequency: | 20GHz |
| OperatingTemperatureRange: | -65Cto+150C |
| P1dB-CompressionPoint: | 32.5dBm |
| Product: | RFJFET |
| FactoryPackQuantity: | 100 |
| Type: | GaAspHEMT |
| Part#Aliases: | 1098617 |