

D1331SH45T
品牌

供应商

分类
Power>>Diode & Thyristor (Si/SiC)>>Thyristor / Diode Discs>>Diod
物料参数
V[RRM] max: | 4500.0V |
I[(FSM)] max: | 28000.0A |
Configuration: | IGCT/IGBT - Freewheeling Diodes |
Housing: | Disc dia 120mm height 26mm / Ceramic |
V[RRM] [V]: | 4500.0 |
I[FAVM]/T[C] [A/°C](@180° el sin): | 1310/85 |
I[FSM] [A](@10ms, Tvj max): | 28000.0 |
∫I2dt [A²s · 103](@10ms, Tvj max): | 3920.0 |
V[F]/I[F] [V/kA](@Tvj max): | 5.6/2.5 |
V[T0] [V](@T[vj max]) max: | 1.83 |
V[R](D) [kV](@TC = 25°): | 2.8 |
r[T] [mΩ](@T[vj max]) max: | 0.948 |
Q[r] [mAs](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max: | 3.5 |
I[RM] [A](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max: | 1500.0 |
R[thJC] [K/kW](@DC) max: | 7.5 |
T[vj] [°C] max: | 140.0 |
Clamping force [kn] max: | 52.0 |