IXFN26N90
品牌
供应商
分类
分立半导体产品>>晶体管 - FET，MOSFET - 单
描述
底座安装 N 沟道 900V 26A（Tc） 600W（Tc） SOT-227B
物料参数
| Vgs(th)(Max)@Id: | 5V @ 8mA |
| Category: | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
| FETFeature: | - |
| DriveVoltage(MaxRdsOn,MinRdsOn): | 10V |
| GateCharge(Qg)(Max)@Vgs: | 240 nC @ 10 V |
| SupplierDevicePackage: | SOT-227B |
| BaseProductNumber: | IXFN26 |
| Technology: | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C: | 26A (Tc) |
| Vgs(Max): | ±20V |
| Mfr: | IXYS |
| CaliforniaProp65: | |
| PowerDissipation(Max): | 600W (Tc) |
| RoHSStatus: | ROHS3 Compliant |
| DraintoSourceVoltage(Vdss): | 900 V |
| OperatingTemperature: | -55°C ~ 150°C (TJ) |
| ProductStatus: | Not For New Designs |
| RdsOn(Max)@Id,Vgs: | 300mOhm @ 13A, 10V |
| Package/Case: | SOT-227-4, miniBLOC |
| MoistureSensitivityLevel(MSL): | Not Applicable |
| ECCN: | EAR99 |
| REACHStatus: | REACH Unaffected |
| MountingType: | Chassis Mount |
| InputCapacitance(Ciss)(Max)@Vds: | 10800 pF @ 25 V |
| Series: | HiPerFET™ |
| FETType: | N-Channel |
| Package: | Tube |
| HTSUS: | 8541.29.0095 |