GAN SYSTEMS
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GS665MB-EVB
供应商: Mouser Electronics
分类: Ferramentas de desenvolvimento IC de gestão de alimentação
描述: Ferramentas de desenvolvimento IC de gestão de alimentação 650V GaN Universal Motherboard
Categoriadeproduto: FerramentasdedesenvolvimentoICdegestãodealimentação Fabricante: GaNSystems Produto: EvaluationBoards Tipo: GateDrivers Ferramentaparaavaliaçãode: GS665 Tensãodeentrada: 5V Voltagemdesaída: 650V Marca: GaNSystems Descrição/Função: Universalmotherboard Parausocom: GS665 Quantidadedopacotedefábrica: 24
供应商: Mouser Electronics
分类: Ferramentas de desenvolvimento IC de gestão de alimentação
描述: Ferramentas de desenvolvimento IC de gestão de alimentação 650V GaN Universal Motherboard
Categoriadeproduto: FerramentasdedesenvolvimentoICdegestãodealimentação Fabricante: GaNSystems Produto: EvaluationBoards Tipo: GateDrivers Ferramentaparaavaliaçãode: GS665 Tensãodeentrada: 5V Voltagemdesaída: 650V Marca: GaNSystems Descrição/Função: Universalmotherboard Parausocom: GS665 Quantidadedopacotedefábrica: 24
GS61008T-E01-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN Preproduction Units
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Id-ContinuousDrainCurrent: 80A RdsOn-Drain-SourceResistance: 7.4mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.52mm Length: 6.95mm MoistureSensitive: Yes Product: MOSFET Series: GS61008 FactoryPackQuantity: 200 Width: 3.1mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN Preproduction Units
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Id-ContinuousDrainCurrent: 80A RdsOn-Drain-SourceResistance: 7.4mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.52mm Length: 6.95mm MoistureSensitive: Yes Product: MOSFET Series: GS61008 FactoryPackQuantity: 200 Width: 3.1mm
GS66508T-EVBDB
供应商: Mouser Electronics
分类: Herramientas de desarrollo de administración de IC
描述: Herramientas de desarrollo de administración de IC GS66508T Half Bridge Daughter Board
Categoríadeproducto: HerramientasdedesarrollodeadministracióndeIC Fabricante: GaNSystems Producto: DaughterCards Tipo: GateDrivers LaHerramientaesparalaEvaluaciónde: GS66508T Voltajedeentrada: 5V Voltajedesalida: 650V Marca: GaNSystems Descripción/Función: GaNE-HEMTtopsidecooled Parautilizarcon: GS66508T Corrientedesalida: 30A Cantidaddeempaquedefábrica: 24
供应商: Mouser Electronics
分类: Herramientas de desarrollo de administración de IC
描述: Herramientas de desarrollo de administración de IC GS66508T Half Bridge Daughter Board
Categoríadeproducto: HerramientasdedesarrollodeadministracióndeIC Fabricante: GaNSystems Producto: DaughterCards Tipo: GateDrivers LaHerramientaesparalaEvaluaciónde: GS66508T Voltajedeentrada: 5V Voltajedesalida: 650V Marca: GaNSystems Descripción/Función: GaNE-HEMTtopsidecooled Parautilizarcon: GS66508T Corrientedesalida: 30A Cantidaddeempaquedefábrica: 24
GS66502B-E01-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V Enhancement Mode Transistor
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-3 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 7.5A RdsOn-Drain-SourceResistance: 560mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 1.7nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.51mm Length: 6.56mm MoistureSensitive: Yes Product: MOSFET Series: GS66502 FactoryPackQuantity: 200 Width: 5.01mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V Enhancement Mode Transistor
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-3 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 7.5A RdsOn-Drain-SourceResistance: 560mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 1.7nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.51mm Length: 6.56mm MoistureSensitive: Yes Product: MOSFET Series: GS66502 FactoryPackQuantity: 200 Width: 5.01mm
GS66508B-EVBDB
供应商: Mouser Electronics
分类: Power Management IC Development Tools
描述: Power Management IC Development Tools GS66508B Half Bridge Daughter Board
ProductCategory: PowerManagementICDevelopmentTools Manufacturer: GaNSystems Product: DaughterCards Type: GateDrivers ToolIsForEvaluationOf: GS66508B InputVoltage: 5V OutputVoltage: 650V Brand: GaNSystems Description/Function: GaNE-HEMT ForUseWith: GS66508B OutputCurrent: 30A FactoryPackQuantity: 24
供应商: Mouser Electronics
分类: Power Management IC Development Tools
描述: Power Management IC Development Tools GS66508B Half Bridge Daughter Board
ProductCategory: PowerManagementICDevelopmentTools Manufacturer: GaNSystems Product: DaughterCards Type: GateDrivers ToolIsForEvaluationOf: GS66508B InputVoltage: 5V OutputVoltage: 650V Brand: GaNSystems Description/Function: GaNE-HEMT ForUseWith: GS66508B OutputCurrent: 30A FactoryPackQuantity: 24
GS66508T-E02-MR
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V RdsOn-Drain-SourceResistance: 55mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 6.5nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Reel Packaging: MouseReel Packaging: CutTape Brand: GaNSystems Height: 0.44mm Length: 6.91mm MoistureSensitive: Yes Product: MOSFET Series: GS66508 FactoryPackQuantity: 250 Width: 4.43mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V RdsOn-Drain-SourceResistance: 55mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 6.5nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Reel Packaging: MouseReel Packaging: CutTape Brand: GaNSystems Height: 0.44mm Length: 6.91mm MoistureSensitive: Yes Product: MOSFET Series: GS66508 FactoryPackQuantity: 250 Width: 4.43mm
GS66508P-E04-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN Preproduction Units
Categoriadeproduto: MOSFET Fabricante: GaNSystems Tecnologia: GaN Estilodemontagem: SMD/SMT Caixa/Gabinete: GaNPX-4 Polaridadedotransistor: N-Channel Vds-Tensãoderupturaentredrenagemefonte: 650V Id-Correntededrenagemcontínua: 30A RdsOn-Fontededrenagemnaresistência: 52mOhms Vgs-Voltagemdeportaefonte: 10V Tensãodelimiteportaefonte: 1.6V Qg-Carganaporta: 6.5nC Embalagem: Tray Mododecanal: Enhancement Marca: GaNSystems Série: GS66508
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN Preproduction Units
Categoriadeproduto: MOSFET Fabricante: GaNSystems Tecnologia: GaN Estilodemontagem: SMD/SMT Caixa/Gabinete: GaNPX-4 Polaridadedotransistor: N-Channel Vds-Tensãoderupturaentredrenagemefonte: 650V Id-Correntededrenagemcontínua: 30A RdsOn-Fontededrenagemnaresistência: 52mOhms Vgs-Voltagemdeportaefonte: 10V Tensãodelimiteportaefonte: 1.6V Qg-Carganaporta: 6.5nC Embalagem: Tray Mododecanal: Enhancement Marca: GaNSystems Série: GS66508
GS61008P-E05-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN Preproduction Units
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Id-ContinuousDrainCurrent: 90A RdsOn-Drain-SourceResistance: 7.4mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Qg-GateCharge: 12nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.45mm Length: 7.5mm Product: MOSFET Series: GS61008 FactoryPackQuantity: 200 Width: 4.54mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN Preproduction Units
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Id-ContinuousDrainCurrent: 90A RdsOn-Drain-SourceResistance: 7.4mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Qg-GateCharge: 12nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.45mm Length: 7.5mm Product: MOSFET Series: GS61008 FactoryPackQuantity: 200 Width: 4.54mm
GS66516T-E02-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 60A E-Mode GaN Preproduction Units
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 60A RdsOn-Drain-SourceResistance: 27mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 13nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.54mm Length: 9mm MoistureSensitive: Yes Product: MOSFET FactoryPackQuantity: 200 Width: 7.64mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 60A E-Mode GaN Preproduction Units
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 60A RdsOn-Drain-SourceResistance: 27mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 13nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems Height: 0.54mm Length: 9mm MoistureSensitive: Yes Product: MOSFET FactoryPackQuantity: 200 Width: 7.64mm